STB8NM60N

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STB8NM60N

+BOM

MOSFET N-CH 600V 7A D2PAK

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Specifications

Attribute Value
Supplier STMicroelectronics
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 7A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 650mOhm @ 3.5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 19 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 560 pF @ 50 V
Power Dissipation (Max) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK

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