STD18N65M2-EP

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STD18N65M2-EP

+BOM

MOSFET N-CH 650V 11A DPAK

  • ManufacturerSTMicroelectronics

  • Mfr. Part #STD18N65M2-EP

  • In Stock9373

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Specifications

Attribute Value
Supplier STMicroelectronics
Package Tape & Reel (TR)
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 11A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 375mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 14.4 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 700 pF @ 100 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-PAK (TO-252)

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