Images are for reference only
STD4NK60ZT4
+BOMMOSFET N-CH 600V 4A DPAK
-
ManufacturerSTMicroelectronics
-
Mfr. Part #STD4NK60ZT4
-
Datasheet STD4NK60ZT4 DataSheet
-
Package TO-252-3
-
In Stock6445
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 26 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 510 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Overview
Description
- 600V Drain-Source Voltage (VDSS) – Suitable for high-voltage circuits.
- 4A Continuous Drain Current (ID) – Handles moderate power loads.
- Low On-Resistance (RDS(on)) – Typically 1.8Ω (max), reducing conduction losses.
- Fast Switching – Optimized for applications like power supplies, motor control, and lighting.
- Avalanche Rugged – Enhances reliability in inductive loads.
Packaged in TO-252 (DPAK), it offers good thermal performance. Ideal for offline SMPS, inverters, and industrial systems.
For detailed specs, refer to the datasheet.
Equivalent
- STP4NK60ZFP (similar specs, TO-220FP package)
- IRF840 (500V, 8A, common alternative)
- FQP4N60 (600V, 4A, TO-220 package)
- 2SK3562 (600V, 4A, N-channel MOSFET)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 600V (drain-source)
- Current Rating: 4A (continuous drain current)
- Low On-Resistance: 1.5Ω (max) @ 10V VGS
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge: Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improves ruggedness
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power supplies, motor control, lighting, and inverters
This MOSFET is designed for efficiency and reliability in medium-power switching applications.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the high-voltage load.
3. Source (S) – Connects to ground.
4. Kelvin Source (S2) – Improves switching performance by reducing parasitic inductance.
Key features:
- 600V drain-source voltage
- 4A continuous drain current
- Low gate charge for efficient switching
Used in power supplies, motor control, and lighting applications.