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STD5N60M2
+BOMMOSFET N-CH 600V 3.5A DPAK
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ManufacturerSTMicroelectronics
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Mfr. Part #STD5N60M2
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In Stock6410
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Specifications
| Attribute | Value |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 3.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.4Ohm @ 1.7A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.5 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 211 pF @ 100 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Overview
Description
STD5N60M2 is STMicroelectronics’ high‑voltage N‑channel power MOSFET.
- Specs (typical): Vds = 600 V; Id ≈ 5 A (continuous); Rds(on) ≈ 0.9–1.5 Ω (specified at Vgs = 10 V); Vgs(th) ~ 2–4 V; includes a body diode; trench MOSFET technology.
- Packaging: common power packages such as TO‑220AB, D²PAK, IPAK.
- Applications: offline switch‑mode power supplies, DC‑DC converters, motor drivers, inverters.
- Drive/notes: requires about 10 V gate drive for guaranteed Rds(on); not guaranteed as a logic‑level device at 4.5 V. Adequate heatsinking and thermal management are important.
- datasheet: consult ST’s STD5N60M2 datasheet for exact electrical, thermal, and packaging details.
In short, a 600 V, 5 A N‑channel MOSFET for high‑voltage switching with trench technology; use with appropriate gate drive and heat sinking.
- Specs (typical): Vds = 600 V; Id ≈ 5 A (continuous); Rds(on) ≈ 0.9–1.5 Ω (specified at Vgs = 10 V); Vgs(th) ~ 2–4 V; includes a body diode; trench MOSFET technology.
- Packaging: common power packages such as TO‑220AB, D²PAK, IPAK.
- Applications: offline switch‑mode power supplies, DC‑DC converters, motor drivers, inverters.
- Drive/notes: requires about 10 V gate drive for guaranteed Rds(on); not guaranteed as a logic‑level device at 4.5 V. Adequate heatsinking and thermal management are important.
- datasheet: consult ST’s STD5N60M2 datasheet for exact electrical, thermal, and packaging details.
In short, a 600 V, 5 A N‑channel MOSFET for high‑voltage switching with trench technology; use with appropriate gate drive and heat sinking.
Features
STD5N60M2 is an STMicroelectronics N-channel enhancement MOSFET. Key features:
- Vds: 600 V; Id (continuous): ~5 A
- Rds(on): typically around 1.6–2.0 Ω at Vgs = 10 V (values vary by lot)
- Vgs(th): ~2–4 V; Gate-source rating ±20 V
- Packaging: options include TO-220AB and D²PAK (and other ST standard packages)
- Gate drive: designed for standard 10 V operation (not guaranteed at logic 4.5 V)
- Avalanche/ruggedness: suitable for inductive-load switching with specified energy handling
- Switching: suitable for moderate-speed switching with reasonable input capacitance
- Operating temp: junction up to ~150°C
- Applications: offline power supplies, motor drives, switch-mode power supplies, inverters
Note: refer to the official datasheet for exact electrical figures and package options.
- Vds: 600 V; Id (continuous): ~5 A
- Rds(on): typically around 1.6–2.0 Ω at Vgs = 10 V (values vary by lot)
- Vgs(th): ~2–4 V; Gate-source rating ±20 V
- Packaging: options include TO-220AB and D²PAK (and other ST standard packages)
- Gate drive: designed for standard 10 V operation (not guaranteed at logic 4.5 V)
- Avalanche/ruggedness: suitable for inductive-load switching with specified energy handling
- Switching: suitable for moderate-speed switching with reasonable input capacitance
- Operating temp: junction up to ~150°C
- Applications: offline power supplies, motor drives, switch-mode power supplies, inverters
Note: refer to the official datasheet for exact electrical figures and package options.
Pinout
- Pin count: 3 pins (Gate, Drain, Source) with the Drain also connected to the package tab (heat‑sinking).
- Function: N-channel enhancement‑mode power MOSFET (600 V, 5 A) used as a high‑voltage switch in power electronics.
- Function: N-channel enhancement‑mode power MOSFET (600 V, 5 A) used as a high‑voltage switch in power electronics.
Manufacturer
- Manufacturer: STMicroelectronics (ST).
- What kind of company: A multinational European semiconductor company that designs, manufactures, and markets a broad range of semiconductor products, including power MOSFETs, ICs, sensors, and microcontrollers.
- What kind of company: A multinational European semiconductor company that designs, manufactures, and markets a broad range of semiconductor products, including power MOSFETs, ICs, sensors, and microcontrollers.
Application
STD5N60M2 is a 600 V, 5 A N-channel power MOSFET. Typical applications include:
- Offline switch-mode power supplies and front-end rectifiers
- PFC (boost) stages and high-voltage DC-DC converters
- Telecom and consumer power adapters
- Solar/industrial inverters and battery chargers
- Motor control and drive circuits for small to mid-size motors
- Uninterruptible power supplies (UPS) and power conditioning stages
- High-voltage switching in LED driver topologies
- Any high-voltage, low-frequency switching applications requiring robust, rugged MOSFETs
- Offline switch-mode power supplies and front-end rectifiers
- PFC (boost) stages and high-voltage DC-DC converters
- Telecom and consumer power adapters
- Solar/industrial inverters and battery chargers
- Motor control and drive circuits for small to mid-size motors
- Uninterruptible power supplies (UPS) and power conditioning stages
- High-voltage switching in LED driver topologies
- Any high-voltage, low-frequency switching applications requiring robust, rugged MOSFETs
Package
D2PAK (TO-263) surface-mount package.
