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STD6N90K5
+BOMMOSFET N-CH 900V 6A DPAK
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ManufacturerSTMicroelectronics
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Mfr. Part #STD6N90K5
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Datasheet STD6N90K5 DataSheet
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In Stock3413
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Specifications
| Attribute | Value |
| Series | MDmesh™ K5 |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 1.1Ohm @ 3A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| Vgs(Max) | ±30V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| BaseProductNumber | STD6N90 |
Overview
Description
Typically housed in a TO-247 package, the STD6N90K5 is designed to handle significant power dissipation, allowing for effective heat management. Its characteristics make it a popular choice among engineers for designing robust and efficient circuits in industrial and consumer electronics. Always refer to the manufacturer's datasheet for detailed specifications, thermal characteristics, and application guidelines to ensure optimal usage.
Equivalent
Features
Key Features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Current Capacity: The continuous drain current (I_D) is rated at 6A, allowing it to handle considerable loads.
3. R_DS(on): It has a low on-resistance, typically around 1.5 ohms, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2-4V, enabling efficient operation with standard drive voltages.
5. Package Type: It is available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: The device offers fast switching capabilities, making it ideal for applications in switch-mode power supplies and inverters.
7. Thermal Performance: It has good thermal stability, contributing to reliable long-term operation.
Overall, the STD6N90K5 is designed for efficiency and high-performance in demanding applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the main current flows into the device. It connects to the load in the application.
3. Source (S): This pin is the output terminal where the current exits the device and is usually connected to ground in common applications.
The STD6N90K5 is designed for high voltage applications, typically rated for 900V with a continuous drain current capability of 6A. It is mainly used in power management, switch-mode power supplies, and other high-voltage switching applications.
Manufacturer
Founded in 1987 through the merger of Italian and French companies, STMicroelectronics has established itself as a leading player in the semiconductor industry. The company emphasizes sustainability and energy efficiency in its product development, aligning with global trends towards greener technology. Its comprehensive portfolio includes power MOSFETs like the STD6N90K5, which are widely used in power management applications due to their efficiency and reliability.
With operations in multiple countries and a strong focus on research and development, STMicroelectronics continues to contribute to advancements in technology, making it a critical partner for businesses in various fields.