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STD7NM60N
+BOMMOSFET N-CH 600V 5A DPAK
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ManufacturerSTMicroelectronics
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Mfr. Part #STD7NM60N
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Datasheet STD7NM60N DataSheet
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Package TO-252-3
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In Stock6890
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 900mOhm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 363 pF @ 50 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Overview
Description
Equivalent
1. IRF840 - N-channel MOSFET with similar specs.
2. STP7NK60Z - Another option from STMicroelectronics.
3. NTMFS5C612NL - A comparable option by ON Semiconductor.
4. FDPF7N60NZ - Fairchild/ON Semiconductor's similar MOSFET.
5. FQA8N60C - Fairchild's equivalent with close characteristics.
Always verify the datasheets for precise matching of specs.
Features
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 6.5A.
2. R_DS(on) Resistance: It has a low on-state resistance, typically around 1.2 ohms, which helps reduce power loss and increase efficiency.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2V and 4V, ensuring compatibility with various driving circuits.
4. Fast Switching: The MOSFET exhibits fast switching speeds, making it suitable for high-frequency applications.
5. Package Type: It is commonly available in a TO-220 package, which facilitates easy mounting and heat dissipation.
6. Applications: Ideal for use in power supplies, converters, motor control, and other high-voltage applications.
7. Enhanced Ruggedness: Offers robust performance against high voltage transients and is designed to withstand harsh electrical environments.
These features make the STD7NM60N a versatile component for efficient energy management in electronic circuits.
Pinout
1. Gate (G): This pin is used to control the conductivity between the drain and source. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the input terminal for the current. Current flows from this pin when the MOSFET is in the 'on' state.
3. Source (S): This is the output terminal for the current. Current exits the MOSFET through the source pin when it is conducting.
Additionally, the MOSFET package often includes a fourth pin, which is a connection to the substrate or metal tab (often referred to as the "back" or "tab"), primarily for heat dissipation purposes. It's usually connected to the source pin internally.
The STD7NM60N is designed for high-voltage applications, with a drain-source voltage (V_DS) rating of 600V and a continuous drain current (I_D) of up to 7A, making it suitable for use in power supply, motor control, and other high-voltage switching applications.
Manufacturer
Application
1. Power Supply Units: Used for switching and regulation in AC-DC and DC-DC converters.
2. Motor Control: Integral in driving motors, offering precise control in industrial and automotive systems.
3. Lighting Systems: Employed in LED drivers and other lighting control systems for efficient power management.
4. Battery Management: Used in battery protection circuits and charging systems for portable electronics.
5. Inverter Circuits: Plays a critical role in inverters for renewable energy systems, like solar panels.
These applications leverage the MOSFET's ability to handle high voltage and current with minimal power loss.