STE110NS20FD

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STE110NS20FD

+BOM

MOSFET N-CH 200V 110A ISOTOP

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Specifications

Attribute Value
Supplier STMicroelectronics
Package Tube
Series MESH OVERLAY™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 110A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 24mOhm @ 50A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 504 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7900 pF @ 25 V
PowerDissipation(Max) 500W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Chassis Mount
SupplierDevicePackage ISOTOP®

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