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STF11NM80
+BOMMOSFET N-CH 800V 11A TO220FP
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ManufacturerSTMicroelectronics
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Mfr. Part #STF11NM80
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Datasheet STF11NM80 DataSheet
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Package TO-220FP
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In Stock7063
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Specifications
| Attribute | Value |
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 400mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 43.6 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1630 pF @ 25 V |
| PowerDissipation(Max) | 35W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Overview
Description
Key features of the STF11NM80 include:
1. N-channel: This MOSFET type uses electrons as charge carriers, which generally allows for faster operation compared to P-channel MOSFETs.
2. High Voltage: It is designed to handle high voltages, often up to 800V, making it suitable for industrial and power supply applications.
3. Low On-Resistance: It features a low on-resistance, which reduces power loss and improves efficiency in circuits.
4. Robust Design: The device is built to withstand high temperatures and harsh operating conditions.
The STF11NM80 is typically used in applications such as power converters, inverters, and other power management systems, where efficient and reliable switching is essential.
Equivalent
1. IRF840 - Similar voltage and current ratings.
2. STP11NM80 - Offers similar specifications, also from STMicroelectronics.
3. FQP12N60C - A close match in terms of performance.
4. IXFH12N80 - Another alternative with similar characteristics.
5. NTE2973 - General replacement option with comparable features.
Always verify the specific requirements of your application before selecting a replacement.
Features
1. Voltage & Current Ratings: It has a maximum drain-source voltage (Vds) of 800V and can handle a continuous drain current (Id) of 10A.
2. RDS(on): The on-state resistance (RDS(on)) is typically low, which minimizes power losses and improves efficiency.
3. Package Type: It is available in a TO-220FP package, which provides insulation and helps in effective heat dissipation.
4. High-Speed Switching: The device offers fast switching performance, which is ideal for high-frequency applications.
5. Enhanced Ruggedness: This MOSFET is designed to withstand high energy in avalanche mode and has a robust design for increased reliability.
6. Applications: Commonly used in switching applications, such as power supplies, converters, and motor control circuits.
These features make the STF11NM80 suitable for a range of high-voltage and high-current applications, delivering efficient performance while maintaining robustness under various operating conditions.
Pinout
1. Pin 1 - Gate (G): This is the control terminal used to turn the MOSFET on or off by applying the appropriate voltage.
2. Pin 2 - Drain (D): This is the terminal where the current flows out of the device when the MOSFET is conducting.
3. Pin 3 - Source (S): This is the terminal where the current enters the device when it is conducting.
4. Tab - Drain (D): The tab is electrically connected to the Drain pin and is often used for heat dissipation.
This MOSFET is known for its high voltage and current handling capabilities, making it suitable for various high-power applications.
Manufacturer
Application
1. Power Management: Used in power supplies for efficient energy conversion and regulation.
2. Motor Control: Ideal for driving motors in industrial and consumer applications.
3. Lighting Systems: Used in LED drivers and other lighting applications for efficient power control.
4. Inverters and Converters: Utilized in renewable energy systems like solar inverters.
5. Switching Circuits: Suitable for high-frequency switching applications due to its fast switching capabilities.
Its robustness and high efficiency make it suitable for demanding applications in both industrial and consumer electronics.