STGW30V60DF

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STGW30V60DF

+BOM

IGBT TRENCH FS 600V 60A TO-247-3

  • ManufacturerSTMicroelectronics

  • Mfr. Part #STGW30V60DF

  • In Stock3723

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Specifications

Attribute Value
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Power - Max 258 W
Switching Energy 383µJ (on), 233µJ (off)
Input Type Standard
Gate Charge 163 nC
Td (on / off) @ 25°C 45ns/189ns
Test Condition 400V, 30A, 10Ohm, 15V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW30
Current - Collector Pulsed (Icm) 120 A
Reverse Recovery Time (trr) 53 ns

Overview

Description

The STGW30V60DF is a high-voltage, N-channel power MOSFET designed for various applications, including power supplies, motor control, and inverter circuits. With a voltage rating of 600V and a current rating of 30A, it offers low on-resistance, making it efficient for high-performance applications.
This device features a fast switching speed and is optimized for low conduction losses, which enhances overall efficiency in power conversion systems. The STGW30V60DF is housed in a TO-247 package, facilitating efficient thermal management and ease of integration into circuit designs.
Additionally, it is suitable for both automotive and industrial applications due to its robust construction and reliability. Its characteristics make it a popular choice among engineers looking to improve power efficiency and thermal performance in their designs. Overall, the STGW30V60DF serves as a versatile and reliable component in modern electronic systems.

Equivalent

The STGW30V60DF is a 600V IGBT from STMicroelectronics. Equivalent products include:
1. Infineon: FGH60N60SFD
2. ON Semiconductor: MBRF60-50
3. Fairchild: FGH30N60UFD
4. Rohm: RGT60N60
5. Nexperia: 60N60N
Always verify specific characteristics like voltage rating, current rating, and switching speed to ensure compatibility for your application.

Features

The STGW30V60DF is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (Vce) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous collector current (Ic) of up to 30A, providing robust performance for power circuits.
3. Low On-State Voltage: Offers a lower Vce(sat) for improved efficiency and reduced power losses during operation.
4. Fast Switching: Designed for fast switching applications, enhancing performance in inverters and converters.
5. Thermal Performance: Features a low thermal resistance, ensuring efficient heat dissipation and reliable operation under load.
6. Robust Design: Built for durability, making it suitable for industrial applications like motor drives and power supplies.
Overall, the STGW30V60DF is ideal for engineers looking for reliable and efficient components in power electronic systems.

Pinout

The STGW30V60DF is a N-channel power MOSFET with a pin count of 6. Its primary functions include high-voltage and high-current switching applications. The device is specifically designed for use in power supplies, motor drives, and other high-efficiency applications.
The pin configuration is as follows:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Drain (D) - (this device has two drain pins to minimize thermal resistance)
5. Source (S) - (this device has two source pins for better current distribution)
6. Gate (G) - (this pin is typically connected to the control circuitry)
The STGW30V60DF is rated for a maximum drain-source voltage of 600V and can handle continuous drain currents up to 30A. Its low on-resistance and high-speed switching capabilities make it suitable for various applications in power electronics.

Manufacturer

The STGW30V60DF is manufactured by STMicroelectronics, a prominent global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of semiconductor products, including microcontrollers, sensors, power management solutions, and discrete components. Founded in 1987 and headquartered in Geneva, Switzerland, the company serves various industries such as automotive, industrial, personal electronics, and communications. STMicroelectronics is recognized for its commitment to innovation and sustainability, providing cutting-edge technologies that enable energy efficiency and improved performance in electronic devices.

Application

The STGW30V60DF is a 600V, 30A IGBT designed for various applications in power electronics. Its primary areas include:
1. Motor Drives: Used in industrial and HVAC applications for efficient motor control.
2. Inverters: Employed in renewable energy systems, such as solar inverters and wind power converters.
3. Switching Power Supplies: Utilized in high-efficiency power conversion systems.
4. Uninterruptible Power Supplies (UPS): Supports backup power solutions.
5. Welding Equipment: Applied in arc welding and plasma cutting systems.
Its high efficiency and fast switching capabilities make it suitable for these applications.

Package

The STGW30V60DF is packaged in a TO-247 format. This type of package is commonly used for high-power applications, providing efficient thermal performance and ease of mounting on heatsinks.

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