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STI11NM80
+BOMMOSFET N-CH 800V 11A I2PAK
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ManufacturerSTMicroelectronics
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Mfr. Part #STI11NM80
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Datasheet STI11NM80 DataSheet
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In Stock3556
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Specifications
| Attribute | Value |
| Supplier | STMicroelectronics |
| Package / Case | Tube |
| Series | MDmesh™ |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 400mOhm @ 5.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 43.6 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1630 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK (TO-262) |
