STI6N62K3

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STI6N62K3

+BOM

MOSFET N-CH 620V 5.5A I2PAK

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Specifications

Attribute Value
Supplier STMicroelectronics
Package Tube
Series SuperMESH3™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 620 V
Current-ContinuousDrain(Id)@25°C 5.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.2Ohm @ 2.8A, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 34 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 875 pF @ 50 V
PowerDissipation(Max) 90W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage I2PAK