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STL4N80K5
+BOMMOSFET N-CH 800V 2.5A POWERFLAT
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ManufacturerSTMicroelectronics
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Mfr. Part #STL4N80K5
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Datasheet STL4N80K5 DataSheet
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In Stock801
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Specifications
| Attribute | Value |
| Series | SuperMESH5™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
| Power Dissipation (Max) | 38W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerFlat™ (5x6) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | STL4N80 |
Overview
Description
This MOSFET is part of the STMicroelectronics family and is known for its robustness and reliability in harsh environments. It typically comes in a TO-220 package, which aids in heat dissipation, enhancing thermal performance. The device’s fast switching speeds contribute to improved efficiency in power conversion applications.
Key characteristics include a gate threshold voltage (V_GS(th)) in the range of 2-4V, ensuring compatibility with standard drive circuits. Overall, the STL4N80K5 is a versatile component for engineers looking to design efficient, high-voltage electronic systems.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: Supports continuous drain current (I_D) of up to 4A at a case temperature of 25°C.
3. R_DS(on): Low on-resistance of around 0.8Ω, which helps in reducing conduction losses.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for easier drive requirements.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Optimized for fast switching applications, enhancing performance in switching power supplies and converters.
7. Thermal Resistance: Good thermal management with low thermal resistance, improving reliability.
These features make the STL4N80K5 ideal for power supply circuits, inverters, and other high-voltage applications.
Pinout
1. Gate (G): This pin controls the MOSFET's operation; applying a voltage here turns the device on and allowing current to flow from drain to source.
2. Drain (D): This pin is where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is where the current enters the MOSFET. It is typically connected to ground or the negative side of the power supply in a circuit.
The STL4N80K5 is designed for high-voltage applications, handling a maximum drain-source voltage of 800V and a continuous drain current of up to 4A. Its robust features make it suitable for power switching applications.
Manufacturer
Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and has a strong presence in Europe, Asia, and the Americas. They focus on innovation and sustainability, emphasizing the development of energy-efficient and high-performance semiconductor solutions. The STL4N80K5 is a high-voltage N-channel MOSFET designed for use in power applications, highlighting STMicroelectronics' commitment to providing robust and reliable components for both consumer and industrial markets.
Application
1. Power Switching: Efficiently controls power in circuits for devices such as power supplies and inverters.
2. Motor Control: Drives DC motors in industrial and consumer applications.
3. Lighting Control: Used in dimmers and LED drivers for efficient lighting solutions.
4. Switching Regulators: Implements buck, boost, and buck-boost converters for voltage regulation.
5. Telecommunications: Utilized in RF amplifiers and signal switching.
6. Consumer Electronics: Integrated into devices for energy-efficient power management.
Its high voltage and current ratings make it suitable for high-performance applications.