STP15NM65N

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STP15NM65N

+BOM

MOSFET N-CH 650V 12A TO220

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Specifications

Attribute Value
Supplier STMicroelectronics
Package / Case Tube
Series MDmesh™ II
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 12A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 380mOhm @ 6A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 33.3 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 983 pF @ 50 V
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220

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