STP4NB100

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STP4NB100

+BOM

MOSFET N-CH 1000V 3.8A TO220AB

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Specifications

Attribute Value
Supplier STMicroelectronics
Package Tube
Series PowerMESH™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 3.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.4Ohm @ 2A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 45 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1400 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

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