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STP4NB100
+BOMMOSFET N-CH 1000V 3.8A TO220AB
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ManufacturerSTMicroelectronics
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Mfr. Part #STP4NB100
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Datasheet STP4NB100 DataSheet
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In Stock3865
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Specifications
| Attribute | Value |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | PowerMESH™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 3.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.4Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 45 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1400 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |