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STP57N65M5
+BOMMOSFET N-CH 650V 42A TO220
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ManufacturerSTMicroelectronics
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Mfr. Part #STP57N65M5
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Datasheet STP57N65M5 DataSheet
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Package TO-220
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In Stock3762
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Specifications
| Attribute | Value |
| Package / Case | Tube |
| Series | MDmesh™ V |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 42A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 63mOhm @ 21A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 98 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 4200 pF @ 100 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
Overview
Equivalent
- Infineon IPA60R190P7 (650V, 48A, 0.19Ω)
- ON Semiconductor FDPF51N25 (250V, 51A, lower voltage)
- IRFP4568PbF (500V, 41A, 0.072Ω)
- STW62N65M5 (higher current, 650V, 62A, 0.055Ω)
Check datasheets for exact compatibility in your application.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 650V drain-source voltage (VDS).
- 57A continuous drain current (ID).
- Low on-resistance (0.045Ω).
- Suitable for high-power switching (e.g., power supplies, motor drives).
Designed for efficiency in industrial and automotive applications.
Application
1. Switched-Mode Power Supplies (SMPS) – Used in AC-DC and DC-DC converters.
2. Motor Drives – Efficient control in industrial and automotive systems.
3. Inverters – Solar inverters, UPS, and welding equipment.
4. Induction Heating – High-frequency power conversion.
5. Lighting Systems – LED drivers and HID ballasts.
Its low on-resistance (0.065Ω) and fast switching make it suitable for energy-efficient, high-performance designs.