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STP7NK80Z
+BOMMOSFET N-CH 800V 5.2A TO220AB
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ManufacturerSTMicroelectronics
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Mfr. Part #STP7NK80Z
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Datasheet STP7NK80Z DataSheet
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In Stock8266
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Specifications
| Attribute | Value |
| Series | SuperMESH™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2.6A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1138 pF @ 25 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | STP7NK80 |
Overview
Description
The device is characterized by low on-resistance (Rds(on)), which minimizes power losses during operation, enhancing efficiency in power conversion applications. It has a gate threshold voltage (Vgs(th)) that allows for easy drive from standard voltage levels, providing flexibility in circuit design.
The STP7NK80Z is housed in a TO-220 package, which aids in heat dissipation, allowing it to operate effectively in demanding environments. Its fast switching capabilities make it ideal for applications that require rapid on-off control, such as inverters, power supplies, and automotive systems.
Overall, the STP7NK80Z is a robust choice for designers looking for high-performance MOSFETs in high-voltage applications.
Equivalent
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V.
2. Current Rating: The continuous drain current (I_D) is rated at 7A, suitable for various power control applications.
3. R_DS(on): It has a low on-resistance, typically around 0.8 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing efficient switching.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for high-speed applications, making it suitable for switching power supplies and other electronic circuits.
7. Thermal Resistance: Offers good thermal management, allowing for operation in demanding environments.
These features make the STP7NK80Z ideal for applications in power converters, motor drives, and industrial equipment.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the current flows out when the MOSFET is turned on.
3. Source (S): This pin is the input terminal where the current enters the MOSFET.
The device is designed for high-voltage applications, with a maximum drain-source voltage of 800V and a continuous drain current of up to 7A. It is commonly used in power management, switch-mode power supplies, and motor control applications.
Manufacturer
Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation and commitment to sustainability. It plays a significant role in the development of technologies for the Internet of Things (IoT), automotive applications, and energy-efficient solutions. The STP7NK80Z itself is a power MOSFET designed for high-voltage applications, making it suitable for use in power supplies, motor drivers, and other electronic circuits.
Application
1. Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Employed in brushless DC motors and other motor drive circuits.
3. Lighting: Used in LED drivers and lighting control systems.
4. Inverters: Functions in photovoltaic and UPS inverters for renewable energy applications.
5. Automotive: Applicable in automotive power management systems for improved efficiency.
Overall, its high voltage and current handling make it suitable for various power electronics applications.