STS9P2UH7

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STS9P2UH7

+BOM

MOSFET P-CH 20V 9A 8SO

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Specifications

Attribute Value
Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series STripFET™
ProductStatus Obsolete
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.5V, 4.5V
RdsOn(Max)@IdVgs 22.5mOhm @ 4.5A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 2390 pF @ 16 V
PowerDissipation(Max) 2.7W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

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