STU4N62K3

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STU4N62K3

+BOM

MOSFET N-CH 620V 3.8A IPAK

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Specifications

Attribute Value
Supplier STMicroelectronics
Package / Case Tube
Series SuperMESH3™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V
Current - Continuous Drain(Id) @ 25°C 3.8A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2Ohm @ 1.9A, 10V
Vgs(th)(Max) @ Id 4.5V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 22 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 550 pF @ 50 V
Power Dissipation (Max) 70W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)

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