STY145N65M5

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STY145N65M5

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MOSFET N-CH 650V 138A MAX247

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Specifications

Attribute Value
Package / Case Tube
Series MDmesh™ V
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 138A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 15mOhm @ 69A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 414 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 18500 pF @ 100 V
Power Dissipation (Max) 625W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package MAX247™

Overview

Description

The STY145N65M5 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. This device is designed primarily for use in power management and switching applications. It features a high drain-source voltage rating of 650V, allowing it to handle significant power levels. The MOSFET's drain current capability is typically around 145A, making it suitable for high-power applications.
Key characteristics of the STY145N65M5 include low on-resistance, which minimizes power losses, and high efficiency in switching operations. It is typically used in applications like power supplies, motor control circuits, and inverter systems. The component is designed to withstand high temperatures and is usually packaged in a TO-247 package, which aids in heat dissipation.
The STY145N65M5 offers robust performance with fast switching speeds, excellent thermal stability, and reliability. These features make it a preferred choice for engineers designing systems that require efficient and reliable power control.

Equivalent

The STY145N65M5 is a power MOSFET produced by STMicroelectronics. Equivalent products from other manufacturers might include the IRFP4668PBF from Infineon Technologies, the APT34M100J from Microsemi, and the IXFB180N65X3 from IXYS. When selecting an equivalent, ensure it matches key specifications like voltage rating, current capacity, Rds(on), and package type for compatibility in your application. Always compare datasheets to confirm suitability.

Features

The STY145N65M5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Here are its key features:
1. Voltage and Current Ratings: It typically offers a drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 145A, making it suitable for high-power applications.
2. Low On-Resistance: The device features low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency.
3. High-Speed Switching: It supports fast switching speeds, enhancing performance in dynamic operations.
4. Robustness: The MOSFET exhibits excellent avalanche and dv/dt capabilities, providing enhanced reliability under demanding conditions.
5. Thermal Performance: It includes efficient thermal management properties, often with a low thermal resistance package.
6. Applications: Commonly used in applications like power supplies, inverters, motor drives, and other industrial and consumer electronics that require high power and efficiency.
7. Package Type: The device is usually available in industry-standard packages such as TO-247, which aids in heat dissipation.
These features make the STY145N65M5 a versatile component for various power electronics applications.

Pinout

The STY145N65M5 is an N-channel MOSFET from STMicroelectronics, part of the MDmesh™ M5 series. It is designed for high-voltage applications and efficient power management.
This MOSFET typically comes in a TO-247 package, which features three pins:
1. Gate (G): Used to control the MOSFET's operation. Applying a voltage to the gate regulates the flow of current between the drain and source.
2. Drain (D): The terminal where the current flows from the load into the MOSFET when it is in the 'on' state.
3. Source (S): The terminal where the current exits the MOSFET and connects to the ground or return path in a circuit.
The STY145N65M5 is characterized by a high breakdown voltage and low on-state resistance, making it suitable for efficient power conversion in high-power applications such as power supplies, converters, and motor drives.

Manufacturer

The STY145N65M5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing, developing, manufacturing, and marketing a wide range of semiconductor products. It serves various sectors, including automotive, industrial, personal electronics, communications equipment, and computer peripherals. The company is recognized for its innovation and comprehensive portfolio of technologies, which include discrete and power devices, microcontrollers, sensors, and more. STMicroelectronics is headquartered in Geneva, Switzerland, and operates worldwide, providing solutions that drive the functionality and performance of electronic devices across multiple industries.

Application

The STY145N65M5 is a high-performance N-channel MOSFET transistor commonly used in various applications. Its primary application areas include power management systems, motor control circuits, and DC-DC converters. It is also used in industrial automation, uninterruptible power supplies (UPS), and renewable energy systems such as solar inverters. Additionally, its features make it suitable for automotive applications, including electric vehicles (EVs) and hybrid electric vehicles (HEVs). The transistor's robust design and efficiency are ideal for high-frequency switching applications, contributing to energy savings and system reliability.

Package

The STY145N65M5 is an N-channel MOSFET with a Max247 package type. The Max247 is a high-power, plastic package that allows for efficient heat dissipation, making it suitable for applications requiring high current and voltage handling capabilities.

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