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TPH1R712MD
+BOMToshiba
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ManufacturerToshiba
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Mfr. Part #TPH1R712MD
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In Stock28255
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Specifications
| Attribute | Value |
Overview
Description
TPH1R712MD appears to be a model number, likely representing a specific product, device, or component. Without additional context or details about its application or industry, it is challenging to provide a precise introduction. Typically, such model numbers are used by manufacturers to identify a particular version or variant of a product, which could range from electronics and appliances to machinery parts or industrial equipment.
To understand TPH1R712MD thoroughly, it would be essential to consult the manufacturer's documentation, product specifications, or a related catalog. These resources can provide information on its features, intended use, technical specifications, and other relevant details. If this model number pertains to a specific industry, such as electronics or automotive, checking industry-specific databases or contacting the manufacturer directly could yield more detailed insights. If you have more context or details, I could help provide a more targeted response.
To understand TPH1R712MD thoroughly, it would be essential to consult the manufacturer's documentation, product specifications, or a related catalog. These resources can provide information on its features, intended use, technical specifications, and other relevant details. If this model number pertains to a specific industry, such as electronics or automotive, checking industry-specific databases or contacting the manufacturer directly could yield more detailed insights. If you have more context or details, I could help provide a more targeted response.
Equivalent
The TPH1R712MD is a MOSFET manufactured by Toshiba, commonly used for switching applications. Equivalent products would be other N-channel MOSFETs with similar voltage, current, and RDS(on) specifications. Potential equivalents include:
1. Infineon BSC067N08NS5 – 80V, with low RDS(on).
2. ON Semiconductor NTMFS5C604NL – 60V, with comparable specifications.
3. Vishay SiRA14DP – 60V, with low RDS(on).
Ensure to verify detailed specs and package compatibility before substituting.
1. Infineon BSC067N08NS5 – 80V, with low RDS(on).
2. ON Semiconductor NTMFS5C604NL – 60V, with comparable specifications.
3. Vishay SiRA14DP – 60V, with low RDS(on).
Ensure to verify detailed specs and package compatibility before substituting.
Features
The TPH1R712MD is a trench field stop IGBT (Insulated Gate Bipolar Transistor) designed for high efficiency and fast switching in power electronic applications. Key features include:
1. Voltage & Current Ratings: It typically supports a collector-emitter voltage (V_CE) of 650V and a continuous collector current (I_C) of around 15A, making it suitable for medium-power applications.
2. Low Saturation Voltage: Offers low V_CE(sat) which contributes to reduced conduction losses, improving overall efficiency.
3. Fast Switching: Designed for fast switching speeds, which helps in minimizing switching losses and enhancing performance in high-frequency applications.
4. Thermal Characteristics: Good thermal performance with optimized heat dissipation, often aided by a Kelvin emitter configuration.
5. Robust Design: High ruggedness and reliability, often featuring protection against latch-up and strong resistance to various stress conditions.
6. Applications: Commonly used in applications like inverters, motor drives, power supplies, and other industrial power systems.
These attributes make the TPH1R712MD a versatile choice for enhancing the performance of power electronics by balancing efficiency, speed, and ruggedness.
1. Voltage & Current Ratings: It typically supports a collector-emitter voltage (V_CE) of 650V and a continuous collector current (I_C) of around 15A, making it suitable for medium-power applications.
2. Low Saturation Voltage: Offers low V_CE(sat) which contributes to reduced conduction losses, improving overall efficiency.
3. Fast Switching: Designed for fast switching speeds, which helps in minimizing switching losses and enhancing performance in high-frequency applications.
4. Thermal Characteristics: Good thermal performance with optimized heat dissipation, often aided by a Kelvin emitter configuration.
5. Robust Design: High ruggedness and reliability, often featuring protection against latch-up and strong resistance to various stress conditions.
6. Applications: Commonly used in applications like inverters, motor drives, power supplies, and other industrial power systems.
These attributes make the TPH1R712MD a versatile choice for enhancing the performance of power electronics by balancing efficiency, speed, and ruggedness.
Pinout
The TPH1R712MD is a MOSFET transistor. It features a 3-pin configuration, typical for discrete MOSFET packages. The pin functions are generally as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is in the conducting state.
3. Source (S): This is the terminal through which the current leaves the MOSFET.
These functions enable the TPH1R712MD to be used in a variety of applications, such as power management, switching, and amplification in electronic circuits. For detailed specifications, always refer to the device's datasheet.
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is in the conducting state.
3. Source (S): This is the terminal through which the current leaves the MOSFET.
These functions enable the TPH1R712MD to be used in a variety of applications, such as power management, switching, and amplification in electronic circuits. For detailed specifications, always refer to the device's datasheet.
Manufacturer
The TPH1R712MD is manufactured by Toshiba Electronic Devices & Storage Corporation. Toshiba is a Japanese multinational conglomerate known for its diverse range of products and services, including electronic and electrical equipment, semiconductors, and storage devices. The company is involved in various sectors such as energy systems, infrastructure, building solutions, and electronic devices. Toshiba has a strong reputation for its technological innovation and commitment to quality, making it a significant player in the electronics and semiconductor industries.
Application
The TPH1R712MD is a type of trimmer potentiometer, often used in electronic circuits for precise adjustments and calibrations. Its application areas include:
1. Consumer Electronics: For tuning and adjusting audio devices, TVs, and other home appliances.
2. Industrial Equipment: Used in machinery for fine-tuning controls and settings.
3. Automotive: In dashboards and control systems to ensure accurate readings and settings.
4. Medical Devices: For calibrating equipment that requires precise adjustments.
5. Communication Devices: Helps in adjusting signal levels and frequencies.
These applications benefit from the component's ability to provide reliable and accurate performance adjustments.
1. Consumer Electronics: For tuning and adjusting audio devices, TVs, and other home appliances.
2. Industrial Equipment: Used in machinery for fine-tuning controls and settings.
3. Automotive: In dashboards and control systems to ensure accurate readings and settings.
4. Medical Devices: For calibrating equipment that requires precise adjustments.
5. Communication Devices: Helps in adjusting signal levels and frequencies.
These applications benefit from the component's ability to provide reliable and accurate performance adjustments.
Package
The TPH1R712MD is typically housed in a TO-220 package. This type of package is commonly used for power semiconductors and includes a metal tab for heat dissipation.
