TPH3206LSGB

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TPH3206LSGB

+BOM

GANFET N-CH 650V 16A 3PQFN

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Specifications

Attribute Value
Supplier Transphorm
Package Tray
ProductStatus Obsolete
FETType N-Channel
Technology GaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 16A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 8V
RdsOn(Max)@IdVgs 180mOhm @ 10A, 8V
Vgs(th)(Max)@Id 2.6V @ 500µA
GateCharge(Qg)(Max)@Vgs 6.2 nC @ 4.5 V
Vgs(Max) ±18V
InputCapacitance(Ciss)(Max)@Vds 720 pF @ 480 V
PowerDissipation(Max) 81W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 3-PQFN (8x8)