Images are for reference only
TPS2812DR
+BOMIC GATE DRVR LOW-SIDE 8SOIC
-
ManufacturerTexas Instruments
-
Mfr. Part #TPS2812DR
-
Datasheet TPS2812DR DataSheet
-
In Stock5871
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Low-Side |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | MOSFET (N-Channel) |
| Voltage - Supply | 4V ~ 14V |
| Logic Voltage - VIL, VIH | 1V, 4V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 14ns, 15ns |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | TPS2812 |
Overview
Description
Key characteristics include a fast rise and fall time, which improves switching performance, and built-in shoot-through protection to prevent short circuits during operation. The TPS2812DR also supports both high-side and low-side configurations. Its compact 8-pin SOIC package makes it easy to integrate into space-constrained designs. Overall, the TPS2812DR is suitable for applications requiring high efficiency, robust performance, and reliability in power management solutions.
Equivalent
Features
1. High Drive Capability: It offers a peak output current of up to 2A, facilitating fast switching and reduced switching losses.
2. Dual Outputs: Two independent channels enable simultaneous gate driving for half-bridge configurations.
3. Wide Supply Voltage Range: Operates from a supply voltage of 10V to 20V, accommodating various applications.
4. Bootstrap Functionality: Supports high-side driving with integrated bootstrap circuits, allowing for efficient operation in half-bridge designs.
5. Under-voltage Lockout (UVLO): Prevents operation under insufficient supply voltage to protect the MOSFETs from being driven incorrectly.
6. Low Propagation Delay: Ensures quick response times, enhancing the overall efficiency and performance of power conversion applications.
7. Thermal Protection: Integrated thermal shutdown feature safeguards against overheating.
These features make the TPS2812DR suitable for applications such as motor drives, power supplies, and inverters.
Pinout
Pin Count and Functions:
1. Pin 1 (VS): Supply voltage for the high-side driver.
2. Pin 2 (HO): High-side gate output.
3. Pin 3 (COM): Common connection for high-side driver.
4. Pin 4 (VS): Supply voltage for the low-side driver.
5. Pin 5 (LO): Low-side gate output.
6. Pin 6 (GND): Ground reference.
7. Pin 7 (IN): Input signal for the low-side driver.
8. Pin 8 (IN): Input signal for the high-side driver.
The TPS2812DR is capable of driving high and low-side MOSFETs efficiently, suitable for applications like motor control, power management, and power conversion systems.
Manufacturer
Texas Instruments is recognized for its commitment to research and development, producing high-quality products that address the needs of engineers and developers worldwide. The TPS2812DR itself is a high-speed, dual-channel gate driver, primarily used in applications for driving MOSFETs and IGBTs in power electronics. TI's broad portfolio and expertise make it a key player in the global semiconductor market.
Application
1. Switching Power Supplies: Enhancing efficiency and response in PWM controllers.
2. Motor Drives: Controlling MOSFETs in brushless DC motors and inverter circuits.
3. Class D Audio Amplifiers: Driving the output stage for improved audio performance.
4. DC-DC Converters: Supporting synchronous rectification in buck converters.
5. Industrial Automation: Utilized in robotic systems and factory automation for precise motor control.
Its ability to drive high-speed MOSFETs makes it suitable for applications requiring rapid switching and efficiency.