TPS2812DR

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TPS2812DR

+BOM

IC GATE DRVR LOW-SIDE 8SOIC

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Specifications

Attribute Value
Part Status Active
DigiKey Programmable Not Verified
Driven Configuration Low-Side
Channel Type Synchronous
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 4V ~ 14V
Logic Voltage - VIL, VIH 1V, 4V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
Rise / Fall Time (Typ) 14ns, 15ns
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number TPS2812

Overview

Description

The TPS2812DR is a high-speed dual gate driver designed by Texas Instruments for driving N-channel MOSFETs and IGBTs in a variety of applications, including motor drives, power supplies, and energy conversion systems. It features a dual-channel output, enabling the simultaneous control of two power devices, which enhances efficiency and reduces component count in designs. The driver operates with a wide supply voltage range of 4.5V to 15V, offering flexibility in various circuit environments.
Key characteristics include a fast rise and fall time, which improves switching performance, and built-in shoot-through protection to prevent short circuits during operation. The TPS2812DR also supports both high-side and low-side configurations. Its compact 8-pin SOIC package makes it easy to integrate into space-constrained designs. Overall, the TPS2812DR is suitable for applications requiring high efficiency, robust performance, and reliability in power management solutions.

Equivalent

Equivalent products to the TPS2812DR include the MIC4427, TC4420, and TC4427. These are all gate drivers suitable for high-speed MOSFET or IGBT driving applications. Ensure to check specifications like voltage ratings, current capabilities, and switching speeds for compatibility with your specific requirements.

Features

The TPS2812DR is a high-speed, dual-channel gate driver designed for driving N-channel MOSFETs and IGBTs. Key features include:
1. High Drive Capability: It offers a peak output current of up to 2A, facilitating fast switching and reduced switching losses.
2. Dual Outputs: Two independent channels enable simultaneous gate driving for half-bridge configurations.
3. Wide Supply Voltage Range: Operates from a supply voltage of 10V to 20V, accommodating various applications.
4. Bootstrap Functionality: Supports high-side driving with integrated bootstrap circuits, allowing for efficient operation in half-bridge designs.
5. Under-voltage Lockout (UVLO): Prevents operation under insufficient supply voltage to protect the MOSFETs from being driven incorrectly.
6. Low Propagation Delay: Ensures quick response times, enhancing the overall efficiency and performance of power conversion applications.
7. Thermal Protection: Integrated thermal shutdown feature safeguards against overheating.
These features make the TPS2812DR suitable for applications such as motor drives, power supplies, and inverters.

Pinout

The TPS2812DR is a high-speed, dual-channel driver designed for driving N-channel MOSFETs in various applications. It comes in a 8-pin SOIC (Surface-Mount) package.
Pin Count and Functions:
1. Pin 1 (VS): Supply voltage for the high-side driver.
2. Pin 2 (HO): High-side gate output.
3. Pin 3 (COM): Common connection for high-side driver.
4. Pin 4 (VS): Supply voltage for the low-side driver.
5. Pin 5 (LO): Low-side gate output.
6. Pin 6 (GND): Ground reference.
7. Pin 7 (IN): Input signal for the low-side driver.
8. Pin 8 (IN): Input signal for the high-side driver.
The TPS2812DR is capable of driving high and low-side MOSFETs efficiently, suitable for applications like motor control, power management, and power conversion systems.

Manufacturer

The TPS2812DR is manufactured by Texas Instruments (TI), a prominent American technology company. Founded in 1930, Texas Instruments specializes in designing and producing semiconductors and various integrated circuits, as well as developing a wide range of electronic solutions. The company is known for its innovation in analog and embedded processing technologies, serving multiple industries, including automotive, industrial, communications, and consumer electronics.
Texas Instruments is recognized for its commitment to research and development, producing high-quality products that address the needs of engineers and developers worldwide. The TPS2812DR itself is a high-speed, dual-channel gate driver, primarily used in applications for driving MOSFETs and IGBTs in power electronics. TI's broad portfolio and expertise make it a key player in the global semiconductor market.

Application

The TPS2812DR is a high-speed, dual-channel, low-side gate driver primarily used in power management applications. Its key application areas include:
1. Switching Power Supplies: Enhancing efficiency and response in PWM controllers.
2. Motor Drives: Controlling MOSFETs in brushless DC motors and inverter circuits.
3. Class D Audio Amplifiers: Driving the output stage for improved audio performance.
4. DC-DC Converters: Supporting synchronous rectification in buck converters.
5. Industrial Automation: Utilized in robotic systems and factory automation for precise motor control.
Its ability to drive high-speed MOSFETs makes it suitable for applications requiring rapid switching and efficiency.

Package

The TPS2812DR is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This surface-mount package features eight pins and is designed for efficient thermal performance and space-saving applications in electronic circuits.

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