UCC27712DR

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UCC27712DR

+BOM

IC GATE DRVR HALF-BRIDGE 8SOIC

  • ManufacturerTexas Instruments

  • Mfr. Part #UCC27712DR

  • Package SOIC (D)-8

  • In Stock4181

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel, P-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 1.5V, 1.6V
Current-PeakOutput(SourceSink) 1.8A, 2.8A
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 16ns, 10ns
OperatingTemperature -40°C ~ 125°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Overview

Description

The UCC27712DR is a high-performance gate driver IC from Texas Instruments, designed for driving both high-side and low-side MOSFETs or IGBTs in half-bridge configurations. It features a wide operating voltage range, typically from 10V to 20V, making it suitable for various industrial and automotive applications. The device provides robust drive capability with a peak output current of up to 4A, ensuring efficient switching performance.
Key features include built-in dead-time control to prevent shoot-through, undervoltage lockout (UVLO) protection, and a high-speed, low-propagation delay of approximately 100 ns. The UCC27712DR is also equipped with a split output configuration to allow independent optimization of turn-on and turn-off times. Its small SOIC-8 package makes it ideal for space-constrained applications.
With its comprehensive protection features and high efficiency, the UCC27712DR is well-suited for power supply systems, motor drives, and renewable energy inverters, providing reliable performance in demanding environments.

Equivalent

The UCC27712DR is a gate driver IC from Texas Instruments used for high-side and low-side MOSFET or IGBT driving in power applications. Equivalent products could include:
1. IR2110 - A high and low-side driver from Infineon Technologies.
2. NCP5181 - A high-speed gate driver from ON Semiconductor.
3. L6386E - A high voltage half-bridge driver from STMicroelectronics.
These alternatives have similar functions but always verify electrical specifications and pin compatibility for your specific application.

Features

The UCC27712DR is a high-performance, dual-channel gate driver designed for power electronics applications. Key features include:
1. High Current Capacity: It can source 2.5 A and sink 5 A, making it suitable for driving large MOSFETs and IGBTs.
2. Wide Supply Voltage Range: It operates over a voltage range of 10 V to 20 V, offering flexibility in various applications.
3. Fast Propagation Delay: The device features a fast propagation delay of 100 ns, enhancing the switching performance.
4. High Input Immunity: It provides high common-mode transient immunity of up to 100 V/ns, ensuring reliable operation in noisy environments.
5. UVLO Protection: The device includes under-voltage lockout (UVLO) for both high-side and low-side drivers, protecting against low supply voltages.
6. Thermal Shutdown: Built-in thermal protection prevents damage from overheating.
7. Shoot-through Prevention: It includes mechanisms to prevent simultaneous conduction of high-side and low-side transistors.
These features make the UCC27712DR ideal for applications requiring robust and efficient gate driving capabilities, such as motor drives, power supplies, and inverters.

Pinout

The UCC27712DR is a high-side/low-side gate driver IC developed by Texas Instruments. It comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. Here is a brief overview of its pin functions:
1. VDD (Pin 1): Supply voltage pin for the low-side driver.
2. HB (Pin 2): High-side driver bootstrap supply pin.
3. HO (Pin 3): High-side driver output pin.
4. HS (Pin 4): High-side driver return pin.
5. HI (Pin 5): High-side input pin.
6. LI (Pin 6): Low-side input pin.
7. COM (Pin 7): Ground pin for the low-side driver.
8. LO (Pin 8): Low-side driver output pin.
The UCC27712DR is designed for driving power MOSFETs and IGBTs in high-performance power conversion applications, such as motor drives, industrial power supplies, and solar inverters. It features key capabilities such as high-speed switching, independent control of high and low sides, and robust protection features.

Manufacturer

The UCC27712DR is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs, manufactures, tests, and sells analog and embedded processing chips. TI is known for its innovations in the electronics sector, providing solutions that are integral in a wide range of applications such as industrial, automotive, personal electronics, and communications equipment. The company is headquartered in Dallas, Texas, and is recognized for its contributions to technology, particularly for its role in the development of calculators, microcontrollers, and various integrated circuits.

Application

The UCC27712DR is a gate driver IC commonly used in various applications due to its high-efficiency and robust performance. Key application areas include:
1. Switch-Mode Power Supplies (SMPS): Used for efficient power conversion and regulation.
2. Motor Drives: Enhances the performance of motor control systems by providing reliable gate driving.
3. Uninterruptible Power Supplies (UPS): Ensures stability and efficiency in power backup systems.
4. Solar Inverters: Facilitates DC to AC conversion in photovoltaic systems.
5. Industrial Power Systems: Provides reliable operation in high-voltage and high-frequency environments.
These applications benefit from the IC’s ability to drive both high-side and low-side MOSFETs and IGBTs efficiently.

Package

The UCC27712DR is a half-bridge gate driver IC from Texas Instruments, provided in an 8-pin SOIC (Small Outline Integrated Circuit) package.