UF3C120080B7S

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UF3C120080B7S

+BOM

SICFET P-CH 1200V 28.8A D2PAK-7

  • ManufacturerUnitedSiC

  • Mfr. Part #UF3C120080B7S

  • In Stock3183

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Specifications

Attribute Value
Supplier UnitedSiC
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 28.8A (Tc)
Rds On(Max) @ Id Vgs 105mOhm @ 20A, 12V
Vgs(th)(Max) @ Id 6V @ 10mA
Gate Charge(Qg)(Max) @ Vgs 23 nC @ 12 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 754 pF @ 100 V
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7

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