VNB10N07

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VNB10N07

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IC PWR DRIVER N-CHAN 1:1 D2PAK

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Specifications

Attribute Value
Package Tube
Series OMNIFET™, VIPower™
ProductStatus Obsolete
SwitchType General Purpose
NumberofOutputs 1
Ratio-Input:Output 1:1
OutputConfiguration Low Side
OutputType N-Channel
Interface On/Off
Voltage-Load 55V (Max)
Voltage-Supply(Vcc/Vdd) Not Required
Current-Output(Max) 14A
RdsOn(Typ) 100mOhm (Max)
InputType Non-Inverting
FaultProtection Current Limiting (Fixed), Over Temperature, Over Voltage
MountingType Surface Mount
SupplierDevicePackage D2PAK

Overview

Description

The VNB10N07 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It is part of the VNB series, known for handling moderate power levels, making it suitable for various applications such as power management, motor controls, and DC-DC converters.
Key features of the VNB10N07 include a voltage rating of approximately 70V, which allows it to handle moderate voltage levels suitable for many standard electronic applications. It typically has a low on-resistance, which ensures efficient current flow with minimal power loss, enhancing the overall energy efficiency of the circuit. The device is often packaged in a TO-220 or similar form factor, providing ease of mounting and adequate heat dissipation.
The VNB10N07's reliability and performance in handling relatively high currents while maintaining stable operation make it a popular choice for designers and engineers seeking a robust solution for power control applications.

Equivalent

The VNB10N07 is a smart power MOSFET designed for automotive applications. Equivalent products include the STMicroelectronics VN3205N7, Infineon BTS141, and International Rectifier's IRF3708. Ensure compatibility by checking key specifications such as voltage, current ratings, and package type. Always consult the datasheets for detailed parameter comparisons to confirm equivalency for your specific application.

Features

The VNB10N07 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, particularly in power management and switching. Here are its key features:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 70V and a continuous drain current (I_D) of around 10A.
2. Low On-Resistance: The MOSFET has a low on-state resistance, which reduces power loss during operation, enhancing efficiency.
3. Fast Switching: It offers fast switching speeds, making it suitable for high-frequency applications.
4. Thermal Performance: The device is designed for efficient thermal management, often featuring a TO-220 package that aids in heat dissipation.
5. Rugged Design: It can handle high energy in avalanche and commutation modes, providing robust performance in demanding applications.
6. Applications: Commonly used in DC-DC converters, motor drivers, and other power-supply applications.
These features make the VNB10N07 a versatile component in electronic circuits requiring efficient power management.

Pinout

The VNB10N07 is a type of power MOSFET, specifically designed for automotive applications. It typically comes in a TO-220 package, which is a common form factor for power transistors and MOSFETs. The pin count and functions for the VNB10N07 are as follows:
1. Pin 1: Gate - This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing current to flow between the drain and source.
2. Pin 2: Drain - The drain is the terminal through which the main current flows when the MOSFET is in the 'on' state. It is typically connected to the load in a circuit.
3. Pin 3: Source - The source is the terminal through which the current leaves the MOSFET. It is typically connected to the ground or negative supply in a circuit.
The VNB10N07 is used for switching and amplification applications in circuits, due to its ability to handle relatively high currents and voltages efficiently.

Manufacturer

The VNB10N07 is a power MOSFET, and its manufacturer is STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products and solutions. It serves a diverse array of industries, including automotive, industrial, personal electronics, communications equipment, and more. STMicroelectronics is known for its innovation in microelectronics, providing solutions for smart driving, the Internet of Things (IoT), and power and energy management, among other areas. The company is headquartered in Geneva, Switzerland, and is one of the leading players in the semiconductor industry.

Application

The VNB10N07 is a N-channel enhancement mode MOSFET. Its application areas include:
1. Switching Power Supplies: Used for efficient power conversion.
2. Motor Controllers: Offers precise control in automotive and industrial applications.
3. DC-DC Converters: Employs efficient voltage conversion.
4. Relay Replacement: Provides solid-state switching in various circuits.
5. Battery Management Systems: Assists in battery protection and charge control.
6. Load Switches: Enables on/off control for different loads.
7. General Purpose Switching: Suitable for numerous electronics applications requiring fast switching.
Its reliability and efficiency make it suitable for both automotive and industrial use, where robust and efficient power control is required.

Package

The VNB10N07 is typically packaged in a TO-263 (D²PAK) package. This surface-mount package is designed for high-power applications, providing efficient heat dissipation and compactness suitable for power MOSFETs.

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