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VND5N07TR-E
+BOMIC PWR DRIVER N-CHANNEL 1:1 DPAK
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ManufacturerSTMicroelectronics
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Mfr. Part #VND5N07TR-E
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Datasheet VND5N07TR-E DataSheet
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Package TO-252-3
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In Stock5936
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET II™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 55V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 3.5A |
| RdsOn(Typ) | 200mOhm (Max) |
| InputType | Non-Inverting |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Overview
Description
The VND5N07TR-E is a type of N-channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. Manufactured by STMicroelectronics, this device is part of the company's low-voltage MOSFET series, offering robust performance in power management systems. With a drain-source voltage (V_DS) rating of 70V and a continuous drain current (I_D) of 5A, it is suitable for medium-power applications. The MOSFET features low on-resistance, which helps to minimize energy losses and enhances efficiency in switching operations.
Packaged in a DPAK (TO-252) configuration, the VND5N07TR-E is designed for surface-mount technology, which allows for compact and efficient circuit board designs. It is often used in applications such as DC-DC converters, motor controls, and power regulation systems. The device's superior thermal performance and fast switching capabilities make it a reliable choice for designers seeking to optimize power circuits. Additionally, it offers built-in ESD protection, ensuring durability and longevity in various electronic applications.
Packaged in a DPAK (TO-252) configuration, the VND5N07TR-E is designed for surface-mount technology, which allows for compact and efficient circuit board designs. It is often used in applications such as DC-DC converters, motor controls, and power regulation systems. The device's superior thermal performance and fast switching capabilities make it a reliable choice for designers seeking to optimize power circuits. Additionally, it offers built-in ESD protection, ensuring durability and longevity in various electronic applications.
Equivalent
The VND5N07TR-E is a MOSFET transistor. For equivalent products, you can consider alternatives with similar specifications from other manufacturers. Some equivalents might include:
1. IRF540N from Infineon (formerly International Rectifier)
2. NTD4906N from ON Semiconductor
3. FDP7030BL from Fairchild Semiconductor (now ON Semiconductor)
Ensure to verify the specifications like voltage rating, current capacity, and package type to confirm compatibility with your application.
1. IRF540N from Infineon (formerly International Rectifier)
2. NTD4906N from ON Semiconductor
3. FDP7030BL from Fairchild Semiconductor (now ON Semiconductor)
Ensure to verify the specifications like voltage rating, current capacity, and package type to confirm compatibility with your application.
Features
The VND5N07TR-E is a monolithic power MOSFET with built-in thermal shutdown and current limiting features. It is designed for automotive and industrial applications, offering robust performance and reliability. Key features include:
1. N-channel MOSFET: Provides efficient switching and conduction.
2. Low On-Resistance: Ensures minimal energy loss and high efficiency.
3. Current Limiting: Protects the device and load from excessive current scenarios.
4. Thermal Shutdown: Automatically turns off the MOSFET when temperature exceeds specified limits, preventing overheating damage.
5. ESD Protection: Safeguards the device against electrostatic discharge.
6. Compact Package: Comes in a surface-mount package suitable for space-constrained applications.
7. Automotive Grade: Engineered to meet automotive industry standards for reliability and performance.
These features make the VND5N07TR-E suitable for controlling DC motors, solenoids, and other inductive loads in harsh environments. It is particularly valued for its protective capabilities and efficiency in high-current applications.
1. N-channel MOSFET: Provides efficient switching and conduction.
2. Low On-Resistance: Ensures minimal energy loss and high efficiency.
3. Current Limiting: Protects the device and load from excessive current scenarios.
4. Thermal Shutdown: Automatically turns off the MOSFET when temperature exceeds specified limits, preventing overheating damage.
5. ESD Protection: Safeguards the device against electrostatic discharge.
6. Compact Package: Comes in a surface-mount package suitable for space-constrained applications.
7. Automotive Grade: Engineered to meet automotive industry standards for reliability and performance.
These features make the VND5N07TR-E suitable for controlling DC motors, solenoids, and other inductive loads in harsh environments. It is particularly valued for its protective capabilities and efficiency in high-current applications.
Pinout
The VND5N07TR-E is a power MOSFET designed for various electronic applications. It typically comes in a DPAK package and features three pins. These pins serve the following functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing current to flow between the drain and source.
2. Drain (D): This is the main current-carrying terminal for the MOSFET. When the MOSFET is on (conducting), current flows from the drain to the source.
3. Source (S): The source pin is the terminal through which the current exits the MOSFET when it is conducting.
The VND5N07TR-E is designed for high-efficiency switching and is commonly used in applications like power management, automotive circuits, and various electronic switching devices.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing current to flow between the drain and source.
2. Drain (D): This is the main current-carrying terminal for the MOSFET. When the MOSFET is on (conducting), current flows from the drain to the source.
3. Source (S): The source pin is the terminal through which the current exits the MOSFET when it is conducting.
The VND5N07TR-E is designed for high-efficiency switching and is commonly used in applications like power management, automotive circuits, and various electronic switching devices.
Manufacturer
The VND5N07TR-E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company is known for its expertise in a variety of areas, including microcontrollers, sensors, power management, and analog devices. STMicroelectronics serves multiple sectors, including automotive, industrial, personal electronics, and communication equipment. The company is headquartered in Geneva, Switzerland, and operates in multiple countries worldwide, providing innovative solutions to various technological challenges.
Application
The VND5N07TR-E is a power MOSFET that is typically used in applications requiring efficient power switching and management. Its main application areas include automotive electronics, where it is used for motor control, lighting, and power distribution modules. It is also utilized in industrial automation systems, switching power supplies, and DC-DC converters. Additionally, due to its robustness and reliability, it can be found in consumer electronics for battery management and power regulation. Its ability to handle high current and voltage makes it suitable for environments demanding high efficiency and compact size.
Package
The VND5N07TR-E is a power MOSFET with a package type known as DPAK (TO-252). This type of package is surface-mount, offering good thermal performance and is commonly used for high-power applications.
