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VNN1NV04PTR-E
+BOMIC PWR DRIVER N-CHAN 1:1 SOT223
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ManufacturerSTMicroelectronics
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Mfr. Part #VNN1NV04PTR-E
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Datasheet VNN1NV04PTR-E DataSheet
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Package SOT-223
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In Stock2879
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET II™, VIPower™ |
| Part Status | Active |
| Switch Type | General Purpose |
| Number of Outputs | 1 |
| Ratio - Input: Output | 1:1 |
| Output Configuration | Low Side |
| Output Type | N-Channel |
| Interface | On/Off |
| Voltage - Load | 36V (Max) |
| Voltage - Supply (Vcc/Vdd) | Not Required |
| Current - Output (Max) | 1.7A |
| Rds On (Typ) | 250mOhm (Max) |
| Input Type | Non-Inverting |
| Fault Protection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
Overview
Description
The VNN1NV04PTR-E is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of electronic applications requiring efficient power switching and management. Key features of the VNN1NV04PTR-E include:
1. N-channel MOSFET: This indicates that it is designed to conduct when a positive voltage is applied to its gate relative to its source.
2. Low On-Resistance: The device typically features low on-resistance, allowing it to handle higher currents with minimal power loss.
3. Logic Level Gate Drive: It can be directly driven by a microcontroller or logic gate, which makes it suitable for use in digital circuits.
4. Robust Design: The VNN1NV04PTR-E is built to withstand high levels of voltage and current, making it reliable in harsh conditions.
5. Applications: Commonly used in automotive, industrial, and consumer electronic applications for tasks like switching power supplies, motor drives, and lighting controls.
The VNN1NV04PTR-E is valued for its efficiency, reliability, and ease of integration into diverse electronic systems.
1. N-channel MOSFET: This indicates that it is designed to conduct when a positive voltage is applied to its gate relative to its source.
2. Low On-Resistance: The device typically features low on-resistance, allowing it to handle higher currents with minimal power loss.
3. Logic Level Gate Drive: It can be directly driven by a microcontroller or logic gate, which makes it suitable for use in digital circuits.
4. Robust Design: The VNN1NV04PTR-E is built to withstand high levels of voltage and current, making it reliable in harsh conditions.
5. Applications: Commonly used in automotive, industrial, and consumer electronic applications for tasks like switching power supplies, motor drives, and lighting controls.
The VNN1NV04PTR-E is valued for its efficiency, reliability, and ease of integration into diverse electronic systems.
Equivalent
The VNN1NV04PTR-E is a power MOSFET from STMicroelectronics. Equivalent products would include other N-channel MOSFETs with similar voltage, current ratings, and package type. Some potential equivalents might be:
1. IRLML2502 from Infineon
2. BS170 from ON Semiconductor
3. FDV301N from Fairchild Semiconductor
Always verify the exact specifications like Vds, Id, Rds(on), and package type to ensure compatibility for specific applications.
1. IRLML2502 from Infineon
2. BS170 from ON Semiconductor
3. FDV301N from Fairchild Semiconductor
Always verify the exact specifications like Vds, Id, Rds(on), and package type to ensure compatibility for specific applications.
Features
The VNN1NV04PTR-E is a small-signal MOSFET produced by ON Semiconductor. Key features include:
1. Type: N-channel MOSFET designed for low-voltage, high-speed switching applications.
2. Voltage Rating: It operates at a drain-source voltage (V_DS) of up to 40V.
3. Current Rating: It can handle a continuous drain current (I_D) of approximately 200mA.
4. Low On-Resistance: The MOSFET features low R_DS(on), optimizing it for efficient power management by minimizing power loss during operation.
5. Package: Comes in a compact SOT-23 package suitable for space-constrained applications like portable electronics.
6. High-Speed Performance: Designed for fast switching, making it ideal for applications requiring quick on/off cycles.
7. Temperature Range: Operates reliably over a temperature range typically from -55°C to 150°C.
8. Applications: Often used in load switching, DC-DC converters, and signal switching applications in consumer electronics.
It offers a balance of performance, size, and efficiency, making it suitable for various electronics applications.
1. Type: N-channel MOSFET designed for low-voltage, high-speed switching applications.
2. Voltage Rating: It operates at a drain-source voltage (V_DS) of up to 40V.
3. Current Rating: It can handle a continuous drain current (I_D) of approximately 200mA.
4. Low On-Resistance: The MOSFET features low R_DS(on), optimizing it for efficient power management by minimizing power loss during operation.
5. Package: Comes in a compact SOT-23 package suitable for space-constrained applications like portable electronics.
6. High-Speed Performance: Designed for fast switching, making it ideal for applications requiring quick on/off cycles.
7. Temperature Range: Operates reliably over a temperature range typically from -55°C to 150°C.
8. Applications: Often used in load switching, DC-DC converters, and signal switching applications in consumer electronics.
It offers a balance of performance, size, and efficiency, making it suitable for various electronics applications.
Pinout
The VNN1NV04PTR-E is a single-channel automotive-grade power MOSFET from STMicroelectronics. It is designed for low-voltage applications and is commonly used in automotive and industrial applications. The device is housed in a SOT-223 package, which typically has 4 pins.
The main functions of the VNN1NV04PTR-E include serving as a robust switch for high-current loads, providing high energy efficiency, and enabling fast switching. Its notable characteristics include low on-resistance and high avalanche capability, making it suitable for demanding environments.
For detailed information regarding the exact pin configuration and specific functions of each pin, it is recommended to consult the datasheet provided by the manufacturer.
The main functions of the VNN1NV04PTR-E include serving as a robust switch for high-current loads, providing high energy efficiency, and enabling fast switching. Its notable characteristics include low on-resistance and high avalanche capability, making it suitable for demanding environments.
For detailed information regarding the exact pin configuration and specific functions of each pin, it is recommended to consult the datasheet provided by the manufacturer.
Manufacturer
The VNN1NV04PTR-E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. Its products are used in various applications, including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is known for its expertise in microcontrollers, sensors, power and analog devices, and other digital and mixed-signal semiconductor components. The company serves customers worldwide and is recognized for its innovation and commitment to sustainable technology solutions.
Application
The VNN1NV04PTR-E is a power MOSFET designed for automotive and industrial applications. Its compact package and efficient power handling capabilities make it suitable for switching and load management tasks. Key application areas include:
1. Automotive Systems: Used in electronic control units (ECUs), lighting, and power distribution modules due to its reliability in harsh environments.
2. Industrial Automation: Employed in motor controls and robotics for efficient power switching.
3. Power Management: Suitable for DC-DC converters and battery management systems.
4. Consumer Electronics: Utilized in power supply circuits and smart home devices for energy-efficient control.
Its robustness and efficiency make it ideal for environments requiring high performance and reliability.
1. Automotive Systems: Used in electronic control units (ECUs), lighting, and power distribution modules due to its reliability in harsh environments.
2. Industrial Automation: Employed in motor controls and robotics for efficient power switching.
3. Power Management: Suitable for DC-DC converters and battery management systems.
4. Consumer Electronics: Utilized in power supply circuits and smart home devices for energy-efficient control.
Its robustness and efficiency make it ideal for environments requiring high performance and reliability.
Package
The package type for VNN1NV04PTR-E is a DFN1110D-3. This is a dual flat no-leads (DFN) package, which is compact and ideal for space-constrained applications, often used for its thermal efficiency and electrical performance.
