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VNS1NV04PTR-E
+BOMIC PWR DRIVER N-CHANNEL 1:1 8SO
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ManufacturerSTMicroelectronics
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Mfr. Part #VNS1NV04PTR-E
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Datasheet VNS1NV04PTR-E DataSheet
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Package SOIC-8
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In Stock1315
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET II™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 36V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 1.7A |
| RdsOn(Typ) | 250mOhm (Max) |
| InputType | Non-Inverting |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
Overview
Description
Key features of the VNS1NV04PTR-E include its capability to handle high voltage and current levels efficiently, making it suitable for robust industrial applications. It usually comes in a compact package, optimizing space on printed circuit boards (PCBs) and allowing for efficient thermal management.
The MOSFET's design focuses on minimizing on-state resistance, enhancing switching speed, and reducing power loss, which contributes to higher efficiency in electronic systems. Additionally, such components are designed to be reliable, with protection features such as over-voltage and over-current protection, ensuring stability and longevity in demanding environments.
For specific applications and technical details, consulting the datasheet provided by the manufacturer will give more in-depth information on electrical characteristics, pin configuration, and typical applications.
Equivalent
1. Infineon BTS series
2. NXP PFET series
3. TI's TPS series high-side switches
It's important to check the exact specifications, as pin configuration and performance characteristics may vary slightly. Always consult technical datasheets to ensure compatibility.
Features
1. MOSFET Type: It's a single N-channel power MOSFET, suitable for various power control applications.
2. Voltage and Current Ratings: The device supports a drain-source voltage (V_DS) of up to 40V and a continuous drain current (I_D) of up to a specified limit, typically around 40A, depending on the package and thermal conditions.
3. R_DS(on): It showcases a low on-resistance, enhancing efficiency by minimizing power loss during operation.
4. Package: The component is commonly available in surface-mount packages, facilitating ease of integration into modern PCBs.
5. Automotive Grade: Being automotive-qualified, it is built to endure the rigorous demands of automotive environments.
6. Protection and Reliability: It includes built-in protection features such as over-temperature protection, over-current protection, and electrostatic discharge (ESD) protection to ensure durability and reliability.
7. Applications: It's typically used in motor drives, power management, and high-side switching applications.
These features make it an excellent choice for robust and reliable power control in automotive systems.
Pinout
The VNS1NV04PTR-E is encapsulated in a PowerSSO-12 package, which means it has 12 pins. The key functions of this device include:
1. High-Side Switching: It controls the connection of the load to the supply voltage.
2. Load Current Limiting: It provides overcurrent protection.
3. Overtemperature Protection: It has thermal shutdown capabilities to prevent overheating.
4. Undervoltage Shutdown: It protects the device from operating under low voltage conditions.
5. Diagnostic Feedback: It offers feedback through a fault indication pin for diagnostic purposes.
Designed for automotive applications, the VNS1NV04PTR-E ensures robustness and reliability with its protective features and is suitable for driving various types of loads safely and efficiently.