Images are for reference only
YJM05N06A
+BOM-
ManufacturerYangzhou Yangjie Elec Tech
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Mfr. Part #YJM05N06A
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In Stock5468
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Specifications
| Attribute | Value |
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package / Case | SOT-223 |
| Operating Temperature | -55℃~+150℃ |
| Rds(on) | 49mΩ@4.5V,4A |
| Drain to Source Voltage (Vdss) | 60V |
| Pd - Power Dissipation | 2.5W |
| Current - Continuous Drain(Id) | 5A |
| Reverse Transfer Capacitance (Crss @ Vds) | 62pF@30V |
| Input Capacitance(Ciss @ Vds) | 1.018nF@30V |
| Gate Threshold Voltage (Vgs(th) @ Id) | 2.5V |
| Gate Charge(Qg) | 26nC@10V |
| Number | 1 N-channel |
Overview
Description
This IGBT is designed for applications like motor drives, inverters, and power supply systems, where efficient power conversion is crucial. It operates effectively in high-voltage environments, making it suitable for industrial and renewable energy applications.
Key features often include low on-state voltage drop, high-speed switching, and thermal stability, which contribute to improved overall system performance. When selecting the YJM05N06A, consider parameters like maximum collector-emitter voltage, gate threshold voltage, and switching speed to ensure it meets the requirements of your specific application.
Equivalent
Features
1. Voltage Rating: Typically supports drain-source voltages up to 60V.
2. Current Rating: Can handle continuous drain currents around 30A, making it suitable for power management.
3. Low On-Resistance: Features a low R_DS(on), which minimizes power loss and heat generation during operation.
4. Fast Switching: Offers rapid switching capabilities, enhancing efficiency in high-frequency applications.
5. Thermal Performance: Designed with good thermal stability, allowing it to operate effectively in challenging environments.
6. Package Type: Available in compact packages, reducing PCB space requirements.
7. Gate Threshold Voltage: Operates efficiently at low gate voltages, enhancing compatibility with various control circuits.
These features make the YJM05N06A suitable for applications in power supplies, motor drives, and DC-DC converters.
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load connects.
3. Source (S) - The input terminal connected to the ground or negative supply.
4. Body Diode - Internal parasitic diode between Drain and Source, allowing current to flow in reverse direction when needed.
For more specific applications and detailed electrical characteristics, it is advisable to consult the manufacturer's datasheet. This chip is generally utilized for switching and amplifying signals within electronic circuits, often in power supplies and converters.
Manufacturer
Application
1. Switching Power Supplies: Efficient switching for converting power in various electronic devices.
2. DC-DC Converters: Used in voltage regulation for battery-powered devices.
3. Motor Control: Drives for electric motors in automotive and industrial applications.
4. LED Drivers: Provides efficient power management for LED lighting solutions.
5. Renewable Energy Systems: Utilized in inverters for solar and wind power systems.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities, improving efficiency and thermal performance.