2N7002L vs 2N7002,215

This in-depth comparison of the 2N7002L and 2N7002,215 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002,215 and 2N7002L are functionally equivalent N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 300 mA continuous drain current, SOT-23 package, and RDS(on) characteristics. Both are suitable for low-side switching, level shifting, and small-signal load control. Designers may treat them as interchangeable in most applications, though gate threshold voltage spread and input capacitance should be validated against the specific drive circuit.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002L

onsemi

Lifecycle
Active
Stock
2923 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

2N7002,215

Nexperia USA Inc.

Lifecycle
Active
Stock
6582 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002L 2N7002,215
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 115mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 10V
Rds On(Max) @ Id Vgs 7.5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Vgs(Max) ±20V ±30V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 50 pF @ 10 V
Power Dissipation (Max) 200mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchMOS™
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