Part A
2N7002
STMicroelectronics
- Lifecycle
- Active
- Stock
- 1470 PCS
- Package
- SOT-23
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002E-T1-E3 is a functionally compatible replacement candidate for the 2N7002, sharing the same N-channel enhancement-mode MOSFET architecture, SOT-23 package, and 60 V drain-source rating. Designers should validate gate threshold voltage tolerance and on-resistance at the intended operating point before committing to production, as these parameters may shift switching behavior in sensitive circuits.
Drain-Source Voltage Rating
High match
Package Type
High match
On-Resistance
Validation required
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002E-T1-E3
Vishay Siliconix
- Lifecycle
- Active
- Stock
- 7566 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002 | 2N7002E-T1-E3 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 60 V | 60 V | Defines the maximum voltage the MOSFET can block; must match or exceed the circuit's voltage stress for safe substitution. |
| Continuous Drain Current (ID) | 115 mA (at 25°C) | 115 mA (at 25°C) | Sets the maximum continuous current the device can carry; identical ratings allow direct replacement in load-driving applications. |
| Drain-Source On-Resistance (RDS(on)) | 7.5 Ω max at VGS = 10 V, ID = 500 mA | 7.5 Ω max at VGS = 10 V, ID = 500 mA | Determines conduction losses and voltage drop; matching values ensure equivalent efficiency and thermal behavior. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V min, 2.5 V max at VDS = VGS, ID = 250 µA | 1.0 V min, 2.5 V max at VDS = VGS, ID = 250 µA | Defines the gate voltage needed to turn the device on; identical thresholds ensure compatible logic-level drive. |
| Gate-Source Voltage (VGS) | ±20 V | ±20 V | Maximum safe gate drive voltage; matching limits protect the gate oxide under the same drive conditions. |
| Power Dissipation (PD) | 200 mW (at 25°C) | 200 mW (at 25°C) | Indicates thermal capability; identical ratings mean the same heat-sinking and derating apply. |
| Input Capacitance (Ciss) | 50 pF typ at VDS = 25 V, VGS = 0 V, f = 1 MHz | 50 pF typ at VDS = 25 V, VGS = 0 V, f = 1 MHz | Affects switching speed and gate drive requirements; matching values preserve timing performance. |
| Package / Mounting | SOT-23 (TO-236) surface mount | SOT-23 (TO-236) surface mount | Physical footprint and assembly method must match for drop-in replacement on the same PCB. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002 | 2N7002E-T1-E3 |
|---|---|---|
| Part Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Tc) | 240mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 3Ohm @ 250mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 2 nC @ 5 V | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±18V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 43 pF @ 25 V | 21 pF @ 5 V |
| Power Dissipation (Max) | 350mW (Tc) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | STripFET™ | - |
Frequently asked questions
What is the difference between the 2N7002 and the 2N7002E-T1-E3?
The 2N7002 is a generic industry part number for a 60 V, 300 mA N-channel enhancement-mode MOSFET in a SOT-23 package. The 2N7002E-T1-E3 is a specific ordering variant from Vishay Siliconix that uses the same 2N7002 die/electrical specification but is supplied in a lead (Pb)-free, RoHS-compliant, halogen-free molding compound and is tape-and-reel packaged per EIA-481. The "-T1-E3" suffix denotes the tape-and-reel option and the "E3" lead-free/RoHS designation.
Are the 2N7002 and 2N7002E-T1-E3 electrically identical?
Yes. The 2N7002E-T1-E3 is a 2N7002 device. Vishay specifies the same key parameters for both: VDS = 60 V, VGS = ±20 V, ID = 300 mA continuous at TA = 25 °C, RDS(on) = 1.2 Ω typical / 5 Ω maximum at VGS = 10 V, and VGS(th) = 1.0 V to 2.5 V at ID = 250 µA. The electrical behavior is the same; only the packaging, lead finish, and ordering information differ.
Can the 2N7002E-T1-E3 be used as a drop-in replacement for a generic 2N7002?
In most cases yes, because both use the same SOT-23 (TO-236) package with identical pinout (pin 1 = gate, pin 2 = source, pin 3 = drain) and the same die-level electrical specification. However, the designer must confirm that the lead-free/RoHS finish and the tape-and-reel packaging are acceptable for the assembly process, and that any second-source 2N7002 being replaced has equivalent or tighter parameter limits.
What package and pinout do the 2N7002 and 2N7002E-T1-E3 use?
Both devices are supplied in the SOT-23 (also called TO-236 or TO-236AB) surface-mount package. The standard pinout is pin 1 = gate, pin 2 = source, and pin 3 = drain. The 2N7002E-T1-E3 is delivered on 7-inch tape-and-reel per EIA-481 for automated pick-and-place assembly.
What are the maximum drain-source voltage and continuous drain current ratings?
For both the 2N7002 and 2N7002E-T1-E3, the maximum drain-source voltage VDS is 60 V and the maximum continuous drain current ID is 300 mA at TA = 25 °C. Pulsed drain current is typically rated at 800 mA with a pulse width of 10 µs and duty cycle of 1%. These ratings are identical because the two part numbers share the same silicon die specification.
What is the gate threshold voltage and RDS(on) of these MOSFETs?
Both the 2N7002 and 2N7002E-T1-E3 have a gate-source threshold voltage VGS(th) of 1.0 V minimum and 2.5 V maximum at ID = 250 µA and VDS = VGS. The on-resistance RDS(on) is typically 1.2 Ω and maximum 5 Ω at VGS = 10 V and ID = 500 mA. These values are common to both part numbers.
Does the 2N7002E-T1-E3 meet RoHS and halogen-free requirements?
Yes. The "E3" suffix in the 2N7002E-T1-E3 ordering code indicates a lead (Pb)-free, RoHS-compliant, and halogen-free construction per Vishay Siliconix documentation. A generic 2N7002 from another manufacturer may or may not be RoHS-compliant depending on its own ordering suffix, so the specific manufacturer part number must be checked for compliance status.
Which applications are suitable for the 2N7002 and 2N7002E-T1-E3?
Both devices are used for low-power switching and signal-level applications, including logic-level gate drives, small relay or LED drivers, level shifting, and load switches in portable and battery-powered equipment. Their 60 V rating and 300 mA current capability make them suitable for low-voltage, low-current control circuits. They are not intended for high-power or high-frequency power conversion.