Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 240mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3Ohm @ 250mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 21 pF @ 5 V |
| PowerDissipation(Max) | 350mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Overview
Description
The 2N7002E-T1-E3 is a small-signal N-channel MOSFET designed for low-voltage, low-current applications. Key features include:
- Voltage Rating: 60V (VDSS)
- Current Rating: 115mA (ID)
- Low Threshold Voltage: ~1V (VGS(th))
- Low On-Resistance: ~5Ω (RDS(on))
- Package: SOT-23 (compact surface-mount)
Commonly used in switching circuits, load drivers, and signal amplification, it’s ideal for battery-powered or portable electronics due to its low power requirements. The E3 suffix indicates enhanced performance in tape-and-reel packaging for automated assembly.
Advantages:
- Fast switching
- Small footprint
- Cost-effective
Limitations:
- Not suited for high-power applications
For detailed specs, refer to the datasheet.
- Voltage Rating: 60V (VDSS)
- Current Rating: 115mA (ID)
- Low Threshold Voltage: ~1V (VGS(th))
- Low On-Resistance: ~5Ω (RDS(on))
- Package: SOT-23 (compact surface-mount)
Commonly used in switching circuits, load drivers, and signal amplification, it’s ideal for battery-powered or portable electronics due to its low power requirements. The E3 suffix indicates enhanced performance in tape-and-reel packaging for automated assembly.
Advantages:
- Fast switching
- Small footprint
- Cost-effective
Limitations:
- Not suited for high-power applications
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the 2N7002E-T1-E3 (N-channel MOSFET, 60V, 115mA) include:
- BS170 (Fairchild/ON Semi)
- 2N7000 (Higher current rating)
- BSS138 (Lower voltage, logic-level)
- DMN2004DWK (Diodes Inc.)
- NDS7002A (Fairchild/ON Semi)
Check datasheets for exact specs like Vgs(th), Rds(on), and package compatibility.
- BS170 (Fairchild/ON Semi)
- 2N7000 (Higher current rating)
- BSS138 (Lower voltage, logic-level)
- DMN2004DWK (Diodes Inc.)
- NDS7002A (Fairchild/ON Semi)
Check datasheets for exact specs like Vgs(th), Rds(on), and package compatibility.
Features
The 2N7002E-T1-E3 is a N-channel MOSFET with the following key features:
- Voltage Rating: 60V (VDSS)
- Current Rating: 115mA (ID)
- Low Threshold Voltage: 1V (VGS(th))
- Low On-Resistance: 5Ω (RDS(on)) at VGS = 10V
- Fast Switching Speed: Ideal for low-power applications
- Small Package: SOT-23 (3-pin), space-efficient
- Low Power Consumption: Suitable for battery-operated devices
- ESD Protection: Enhanced reliability
Commonly used in signal switching, load control, and logic-level applications.
- Voltage Rating: 60V (VDSS)
- Current Rating: 115mA (ID)
- Low Threshold Voltage: 1V (VGS(th))
- Low On-Resistance: 5Ω (RDS(on)) at VGS = 10V
- Fast Switching Speed: Ideal for low-power applications
- Small Package: SOT-23 (3-pin), space-efficient
- Low Power Consumption: Suitable for battery-operated devices
- ESD Protection: Enhanced reliability
Commonly used in signal switching, load control, and logic-level applications.
Pinout
The 2N7002E-T1-E3 is a N-channel MOSFET with 3 pins in a SOT-23 package.
Pin Functions:
1. Gate (G) – Controls the MOSFET's conductivity.
2. Drain (D) – Connects to the load (higher voltage side).
3. Source (S) – Connects to ground (lower voltage side).
Key Features:
- Low threshold voltage (~1V).
- 60V drain-source voltage (VDS).
- Continuous drain current (ID) of ~300mA.
- Used for switching and amplification in low-power circuits.
Compact and widely used in SMD applications.
Pin Functions:
1. Gate (G) – Controls the MOSFET's conductivity.
2. Drain (D) – Connects to the load (higher voltage side).
3. Source (S) – Connects to ground (lower voltage side).
Key Features:
- Low threshold voltage (~1V).
- 60V drain-source voltage (VDS).
- Continuous drain current (ID) of ~300mA.
- Used for switching and amplification in low-power circuits.
Compact and widely used in SMD applications.
Application
The 2N7002E-T1-E3 is a small-signal N-channel MOSFET commonly used in:
1. Switching Circuits – Low-power load switching in digital/logic circuits.
2. Signal Amplification – Small-signal amplification in audio/RF applications.
3. Protection Circuits – Reverse polarity/ESD protection.
4. Logic Level Conversion – Interface between different voltage levels (e.g., 3.3V ↔ 5V).
5. Automotive & Consumer Electronics – Used in sensors, relays, and power management.
Its low threshold voltage (~1V) and compact SOT-23 package make it ideal for space-constrained, low-power designs.
1. Switching Circuits – Low-power load switching in digital/logic circuits.
2. Signal Amplification – Small-signal amplification in audio/RF applications.
3. Protection Circuits – Reverse polarity/ESD protection.
4. Logic Level Conversion – Interface between different voltage levels (e.g., 3.3V ↔ 5V).
5. Automotive & Consumer Electronics – Used in sensors, relays, and power management.
Its low threshold voltage (~1V) and compact SOT-23 package make it ideal for space-constrained, low-power designs.
Package
The 2N7002E-T1-E3 is a SOT-23 packaged N-channel MOSFET. It is a surface-mount device (SMD) with three pins, commonly used for low-power switching applications. The "T1" in the part number typically indicates a tape-and-reel packaging for automated assembly. The compact SOT-23 package makes it suitable for space-constrained designs.
