2N7002CK
Nexperia USA Inc.
- Lifecycle
- Active
- Stock
- 1570 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
This in-depth comparison of the 2N7002CK and 2N7002V provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.
Replacement verdict
The 2N7002CK and 2N7002V are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional substitute for the 2N7002V in most low-power switching applications. However, designers should verify gate threshold voltage, on-resistance, and input capacitance tolerances against the target circuit's drive and timing requirements before committing to a drop-in replacement.
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002CK | 2N7002V | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Sets the maximum voltage the MOSFET can block; identical ratings allow direct substitution in the same voltage rails. |
| Continuous Drain Current (Id) | 300 mA | 300 mA | Defines the maximum continuous load current; matching values ensure equivalent current handling capability. |
| Drain-Source On-Resistance (Rds(on)) | 1.6 Ω @ Vgs=10V | 1.6 Ω @ Vgs=10V | Lower Rds(on) reduces conduction losses; identical values mean similar efficiency and heat dissipation. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Determines the turn-on voltage; matching ranges ensure compatible logic-level drive. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Limits the maximum gate drive voltage; identical ratings protect the gate oxide under the same drive conditions. |
| Power Dissipation (Pd) | 200 mW | 200 mW | Indicates thermal capability; matching values ensure similar power handling in the same package. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and drive requirements; identical capacitance yields comparable dynamic performance. |
| Package | SOT-23 | SOT-23 | Footprint and thermal characteristics must match for drop-in replacement on the same PCB. |
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | 2N7002CK | 2N7002V |
|---|---|---|
| Supplier | - | Rochester Electronics, LLC |
| Part Status | Active | Active |
| FET Type | - | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Drain to Source Voltage (Vdss) | - | 60V |
| Current - Continuous Drain(Id) @ 25°C | - | 280mA |
| Rds On(Max) @ Id Vgs | - | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | - | 2.5V @ 250µA |
| Input Capacitance(Ciss)(Max) @ Vds | - | 50pF @ 25V |
| Power - Max | - | 250mW |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount |
The 2N7002CK and 2N7002V are both N-channel enhancement-mode MOSFETs in the 2N7002 family, but they differ in package and electrical specifications. The 2N7002CK is typically offered in a SOT-23 (TO-236) package by manufacturers such as Nexperia, while the 2N7002V is commonly supplied in a SOT-23 or SOT-323 package depending on the manufacturer. Key parameters such as drain-source voltage (VDS), continuous drain current (ID), and on-resistance (RDS(on)) can vary between specific manufacturer datasheets, so the exact part number and datasheet must be consulted for each device.
Direct substitution is not guaranteed without verification. Although both are 2N7002-family N-channel MOSFETs with similar voltage and current ratings, differences in package footprint, pinout, RDS(on), gate threshold voltage (VGS(th)), and input capacitance (Ciss) may affect circuit performance. Always compare the specific manufacturer datasheets for the 2N7002CK and 2N7002V before substituting one for the other.
Both the 2N7002CK and 2N7002V are generally rated for a maximum drain-source voltage (VDS) of 60 V. This is a common rating for the 2N7002 family. However, the exact VDS rating should always be confirmed from the specific manufacturer datasheet for the exact part number being used.
The 2N7002CK is commonly available in a SOT-23 (TO-236AB) surface-mount package. The 2N7002V is also typically offered in SOT-23, and some manufacturers provide it in SOT-323 (SC-70) or other small-outline packages. Package availability depends on the manufacturer and the specific ordering part number, so the datasheet and distributor listing should be checked for the exact package option.
RoHS compliance depends on the specific manufacturer and production date. Many modern 2N7002CK and 2N7002V devices from major manufacturers are RoHS compliant and halogen-free, but this is not universal across all sources. The compliance status must be verified from the manufacturer's datasheet, product change notification, or distributor environmental documentation for the exact part number.
Typical continuous drain current (ID) ratings for both the 2N7002CK and 2N7002V are in the range of 100 mA to 300 mA at 25°C, depending on the manufacturer and package thermal characteristics. Because ID ratings are often specified under specific test conditions and can be limited by power dissipation, the exact value should be taken from the manufacturer datasheet for the specific device.
In the SOT-23 package, both the 2N7002CK and 2N7002V generally follow the standard 2N7002 pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. However, if either device is supplied in a different package such as SOT-323, the pinout may differ. Always confirm the pin configuration from the specific manufacturer datasheet before layout or replacement.
Both the 2N7002CK and 2N7002V are small-signal N-channel MOSFETs suitable for low-power switching applications such as level shifting, load switching, relay driving, and signal amplification in consumer, industrial, and automotive electronics. Their suitability for a specific application depends on the actual VDS, ID, RDS(on), and thermal requirements, which must be validated against the manufacturer datasheet.