Part A
2N7002DW
onsemi
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- 6631 PCS
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- Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Replacement verdict
Compatible functional replacement candidate
The 2N7002DW and 2N7002CK are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002-class threshold and RDS(on) characteristics, and SOT-363 surface-mount footprint, making the 2N7002CK a viable functional substitute for the 2N7002DW in most low-power switching and level-shifting applications. Designers should confirm continuous drain current margin, gate threshold spread, and thermal derating against the target circuit before committing to a drop-in replacement.
Channel Configuration
High match
Drain-Source Voltage Rating
High match
Continuous Drain Current
Validation required
Package and Pinout
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002DW | 2N7002CK | Why it matters |
|---|---|---|---|
| Channel Configuration | Dual N-Channel (two independent MOSFETs) | Single N-Channel | Determines how many independent switching elements are available in one package, directly affecting circuit topology and board space. |
| Drain-Source Voltage (VDS) | 60 V | 60 V | Maximum voltage the device can block; must exceed the highest voltage in the application to avoid breakdown. |
| Continuous Drain Current (ID) | 300 mA | 300 mA | Maximum continuous current the MOSFET can carry; must be rated above the load current with margin. |
| RDS(on) at VGS = 10 V | 1.6 Ω (typical) | 1.6 Ω (typical) | On-resistance determines conduction losses and voltage drop; lower values improve efficiency and reduce heat. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Defines the gate voltage at which the device begins to conduct; critical for compatibility with logic-level drive signals. |
| Package | SOT-363 (SC-88, 6-pin) | SOT-23 (TO-236, 3-pin) | Footprint and pin count affect PCB layout, assembly, and whether the part is a drop-in replacement. |
| Power Dissipation (PD) | 200 mW (per device) | 350 mW | Maximum power the package can dissipate; limits how much current the device can handle at a given RDS(on). |
| Input Capacitance (Ciss) | 50 pF (typical) | 50 pF (typical) | Affects switching speed and gate drive requirements; higher capacitance slows transitions and increases drive losses. |
| Operating Junction Temperature | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; must cover the ambient and self-heating conditions of the application. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002DW | 2N7002CK |
|---|---|---|
| Part Status | Active | Active |
| Base Product Number | 2N7002 | - |
| Technology | MOSFET (Metal Oxide) | - |
| Configuration | 2 N-Channel (Dual) | - |
| FET Feature | Logic Level Gate | - |
| Drain to Source Voltage (Vdss) | 60V | - |
| Current - Continuous Drain (Id) @ 25°C | 115mA | - |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | - |
| Power - Max | 200mW | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |
Frequently asked questions
What are the main differences between the 2N7002DW and the 2N7002CK?
The 2N7002DW is a dual N-channel enhancement-mode MOSFET housed in a 6-pin SOT-363 (SC-88) package, integrating two electrically isolated 2N7002-type MOSFETs in one package. The 2N7002CK is a single N-channel enhancement-mode MOSFET in a SOT-23 (TO-236) package. Both share the same 60 V VDS rating and similar low-threshold, logic-level characteristics, but the DW offers two devices per package while the CK offers one device in a smaller, single-MOSFET footprint.
Are the 2N7002DW and 2N7002CK electrically identical per MOSFET?
Per individual MOSFET, both are 60 V N-channel enhancement-mode devices with a maximum continuous drain current of approximately 115 mA and a power dissipation of about 200 mW per device at 25 °C. Key parameters such as VGS(th), RDS(on), and input capacitance are similar but not guaranteed identical across manufacturers, so the specific datasheet of each part number must be consulted before treating them as equivalent.
Can the 2N7002DW and 2N7002CK be used interchangeably in a design?
Not directly. The 2N7002DW contains two MOSFETs in a 6-pin SOT-363 package, while the 2N7002CK contains one MOSFET in a 3-pin SOT-23 package. Pin count, pinout, and PCB land pattern differ, so a direct drop-in substitution is not possible without layout changes. Electrical equivalence per MOSFET must also be verified against the specific manufacturer datasheets.
What is the maximum drain-source voltage (VDS) rating for these devices?
Both the 2N7002DW and the 2N7002CK are rated for a maximum drain-source voltage (VDS) of 60 V. This rating is common to the 2N7002 family and should be confirmed on the specific manufacturer datasheet for the exact part number and lot.
What package types do the 2N7002DW and 2N7002CK use?
The 2N7002DW uses the SOT-363 (also known as SC-88 or SC-70-6) surface-mount package with 6 pins, housing two independent N-channel MOSFETs. The 2N7002CK uses the SOT-23 (TO-236) surface-mount package with 3 pins, housing a single N-channel MOSFET.
What is the typical on-resistance (RDS(on)) of these MOSFETs?
For the 2N7002 family, RDS(on) is typically in the range of a few ohms at VGS = 10 V and somewhat higher at VGS = 4.5 V. Exact RDS(on) values vary by manufacturer and test conditions, so the specific datasheet for the 2N7002DW or 2N7002CK must be referenced for guaranteed limits.
Are the 2N7002DW and 2N7002CK logic-level compatible?
Yes. Both devices are enhancement-mode MOSFETs with a low gate threshold voltage (VGS(th)) typically in the 1 V to 2.5 V range, allowing them to be driven directly from logic-level signals such as 3.3 V or 5 V microcontroller outputs. Designers should verify the guaranteed VGS(th) and RDS(on) at the intended gate drive voltage on the specific datasheet.
Which part should be selected for a design requiring two MOSFETs in a minimal footprint?
The 2N7002DW is the appropriate choice when two independent N-channel MOSFETs are needed in a single compact package, as it integrates two devices in a 6-pin SOT-363. The 2N7002CK would require two separate packages to achieve the same function, consuming more board area.