Part A
2N7002KT1G
onsemi
- Lifecycle
- Active
- Stock
- 2832 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002ET1G and 2N7002KT1G are both N-channel enhancement-mode MOSFETs in the SOT-23 package with matched voltage and current ratings, making them viable functional substitutes in most low-power switching and level-shifting applications. Designers should verify gate threshold and on-resistance tolerances against their specific drive conditions before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
On-Resistance
Validation required
Parts at a glance
Part B
2N7002ET1G
onsemi
- Lifecycle
- Active
- Stock
- 4059 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002ET1G | 2N7002KT1G | Why it matters |
|---|---|---|---|
| Drain-to-Source Voltage (VDS) | 60 V | 60 V | Maximum voltage the device can block; must meet or exceed circuit rail voltage for safe operation. |
| Continuous Drain Current (ID) | 310 mA | 115 mA | Higher current rating allows the device to drive heavier loads without overheating or failing. |
| Drain-to-Source On-Resistance (RDS(on)) | 1.6 Ω @ VGS = 10 V, ID = 0.5 A | 1.6 Ω @ VGS = 10 V, ID = 0.5 A | Lower on-resistance reduces conduction losses and heat generation during switching. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Determines the minimum gate voltage needed to turn the MOSFET on; affects logic-level compatibility. |
| Gate-Source Voltage (VGS) Max | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can permanently damage the gate oxide. |
| Power Dissipation (PD) | 300 mW | 225 mW | Higher power dissipation capability allows the device to handle more heat without derating. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; lower capacitance enables faster switching. |
| Package | SOT-23 | SOT-23 | Footprint and thermal characteristics must match the PCB layout for drop-in replacement. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002KT1G | 2N7002ET1G |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 320mA (Ta) | 260mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.6Ohm @ 500mA, 10V | 2.5Ohm @ 240mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.7 nC @ 4.5 V | 0.81 nC @ 5 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 24.5 pF @ 20 V | 26.7 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) | 300mW (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the key differences between the 2N7002ET1G and 2N7002KT1G MOSFETs?
The 2N7002ET1G and 2N7002KT1G are both N-channel enhancement-mode MOSFETs in SOT-23 packages, but they differ in on-resistance, gate threshold voltage, and current rating. The 2N7002ET1G typically features a lower RDS(on) and higher continuous drain current compared to the 2N7002KT1G, which is designed for lower gate drive voltage applications. Designers should consult the respective manufacturer datasheets for exact parametric limits before substitution.
Can the 2N7002ET1G and 2N7002KT1G be used interchangeably in a design?
Direct interchangeability is not guaranteed. Although both share the same SOT-23 footprint and basic N-channel MOSFET function, differences in RDS(on), VGS(th), input capacitance, and power dissipation may affect circuit performance. A drop-in replacement should only be made after verifying that the replacement part meets all electrical and thermal requirements of the target application.
What is the maximum drain-source voltage (VDS) for the 2N7002ET1G and 2N7002KT1G?
Both the 2N7002ET1G and 2N7002KT1G have a maximum drain-source voltage rating of 60 V. This is a standard rating for the 2N7002 family and is verified in the respective manufacturer datasheets.
What is the continuous drain current (ID) rating for each device?
The 2N7002ET1G is typically rated for a continuous drain current of 300 mA at 25°C, while the 2N7002KT1G is rated for 115 mA at 25°C. These values are based on manufacturer datasheets and may be limited by package thermal considerations in practical applications.
How do the gate threshold voltages (VGS(th)) compare between the 2N7002ET1G and 2N7002KT1G?
The 2N7002ET1G has a gate threshold voltage range typically between 1.0 V and 2.5 V, whereas the 2N7002KT1G has a VGS(th) range of approximately 0.8 V to 1.5 V. The lower threshold of the 2N7002KT1G makes it more suitable for low-voltage logic-level gate drive, while the 2N7002ET1G offers a higher threshold for improved noise immunity.
What are the typical on-resistance (RDS(on)) values for these MOSFETs?
The 2N7002ET1G typically exhibits an RDS(on) of about 1.6 Ω at VGS = 10 V and 2.5 Ω at VGS = 4.5 V. The 2N7002KT1G typically shows an RDS(on) of approximately 1.2 Ω at VGS = 10 V and 2.0 Ω at VGS = 4.5 V. These values are subject to manufacturer tolerances and should be confirmed on the latest datasheet.
Are the 2N7002ET1G and 2N7002KT1G RoHS compliant and halogen-free?
Both the 2N7002ET1G and 2N7002KT1G are generally available as RoHS-compliant and halogen-free devices, as stated in manufacturer environmental documentation. However, compliance status can vary by production lot and manufacturer, so the specific part number and date code should be verified against the supplier's declaration.
What package type do the 2N7002ET1G and 2N7002KT1G use?
Both devices are offered in the SOT-23 (TO-236) surface-mount package, which is a standard 3-lead plastic package. The package dimensions and pinout are identical, allowing for PCB layout compatibility, but electrical differences still require design verification.
Which device is better for low-voltage gate drive applications?
The 2N7002KT1G is generally better suited for low-voltage gate drive applications because its lower gate threshold voltage (VGS(th)) allows it to turn on fully at logic levels as low as 1.8 V or 2.5 V. The 2N7002ET1G may require a higher gate voltage to achieve comparable RDS(on) performance, making it less ideal for very low-voltage logic interfaces.