2N7002KT1G vs 2N7002E-T1-E3

This in-depth comparison of the 2N7002KT1G and 2N7002E-T1-E3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

2N7002KT1G

onsemi

Lifecycle: Active
Stock: 2832 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

2N7002E-T1-E3

Vishay Siliconix

Lifecycle: Active
Stock: 7566 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002KT1G	2N7002E-T1-E3
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	320mA (Ta)	240mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On(Max) @ Id Vgs	1.6Ohm @ 500mA, 10V	3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	0.7 nC @ 4.5 V	0.6 nC @ 4.5 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	24.5 pF @ 20 V	21 pF @ 5 V
Power Dissipation (Max)	350mW (Ta)	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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