2N7002K-7 vs 2N7002CK

This in-depth comparison of the 2N7002K-7 and 2N7002CK provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002CK are functionally compatible N-channel MOSFETs with matching voltage, current, and package characteristics, making them suitable drop-in replacement candidates for most low-power switching applications. Designers should verify gate threshold tolerances and thermal performance against specific circuit requirements before finalizing substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002K-7

Diodes Incorporated

Lifecycle
Active
Stock
5630 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
Part B

2N7002CK

Nexperia USA Inc.

Lifecycle
Active
Stock
1570 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002K-7 2N7002CK
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 380mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 5V, 10V -
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V -
Vgs(th)(Max) @ Id 2.5V @ 1mA -
Gate Charge(Qg)(Max) @ Vgs 0.3 nC @ 4.5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V -
Power Dissipation (Max) 370mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -