2N7002,215 vs 2N7002K-7

This in-depth comparison of the 2N7002,215 and 2N7002K-7 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002,215 are functionally compatible N-channel MOSFETs suitable for direct substitution in most low-power switching applications. Both devices share identical drain-source voltage, continuous drain current, and power dissipation ratings, with the primary distinction being package style and gate threshold voltage tolerance. Designers should verify gate drive compatibility and thermal layout when substituting between the SOT-23 and TO-236AB packages.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type Validation required
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002,215

Nexperia USA Inc.

Lifecycle
Active
Stock
6582 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

2N7002K-7

Diodes Incorporated

Lifecycle
Active
Stock
5630 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002K-7
Series TrenchMOS™ -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 380mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V 5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 1mA
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V 50 pF @ 25 V
Power Dissipation (Max) 830mW (Ta) 370mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 0.3 nC @ 4.5 V
Compare RFQ