2N7002K-T1-E3 vs 2N7002K

This in-depth comparison of the 2N7002K and 2N7002K-T1-E3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
2N7002K

+BOM

3271 PCS | Rectron USA
2N7002K-T1-E3

+BOM

3495 PCS | Vishay Siliconix
Package SOT-23 SOT-23-3
Description MOSFET N-CHANNEL 60V 300MA SOT23 MOSFET N-CH 60V 300MA SOT23-3
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V 60 V
Current-ContinuousDrain(Id)@25°C 300mA (Ta) 300mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 2Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 1.9V @ 250µA 2.5V @ 250µA
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 50 pF @ 25 V 30 pF @ 25 V
PowerDissipation(Max) 350mW (Ta) 350mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Series - TrenchFET®
GateCharge(Qg)(Max)@Vgs - 0.6 nC @ 4.5 V
Comparison Model : 2N7002K 2N7002K-T1-E3

+BOM RFQ