2N7002K vs 2N7002LT1G

This in-depth comparison of the 2N7002K and 2N7002LT1G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K is a compatible functional replacement candidate for the 2N7002LT1G in most low-power switching applications, with matching voltage ratings, current handling, and package footprint. Designers should validate gate threshold spread and thermal margins in the target circuit before committing to production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002K

Rectron USA

Lifecycle
Active
Stock
3271 PCS
Package
SOT-23
Series
Transistors - FETs, MOSFETs - Single
Part B

2N7002LT1G

onsemi

Lifecycle
Active
Stock
7047 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002K 2N7002LT1G
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 115mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 1.9V @ 250µA 2.5V @ 250µA
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount