2N7002NXAKR vs 2N7002V

This in-depth comparison of the 2N7002NXAKR and 2N7002V provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

2N7002NXAKR

Nexperia USA Inc.

Lifecycle: Active
Stock: 2910 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

2N7002V

Fairchild Semiconductor

Lifecycle: Active
Stock: 4358 PCS
Package: SOT-666
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002NXAKR	2N7002V
Supplier	-	Rochester Electronics, LLC
Part Status	Active	Active
FET Type	N-Channel	2 N-Channel (Dual)
FET Feature	-	Logic Level Gate
Drain to Source Voltage (Vdss)	60 V	60V
Current - Continuous Drain(Id) @ 25°C	190mA (Ta), 300mA (Tc)	280mA
Rds On(Max) @ Id Vgs	4.5Ohm @ 100mA, 10V	7.5Ohm @ 50mA, 5V
Vgs(th)(Max) @ Id	2.1V @ 250µA	2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds	20 pF @ 10 V	50pF @ 25V
Power - Max	-	250mW
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Technology	MOSFET (Metal Oxide)	-
Drive Voltage(Max Rds On Min Rds On)	5V, 10V	-
Gate Charge(Qg)(Max) @ Vgs	0.43 nC @ 4.5 V	-
Vgs(Max)	±20V	-
Power Dissipation (Max)	265mW (Ta), 1.33W (Tc)	-

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