Part A
2N7002NXAKR
Nexperia USA Inc.
- Lifecycle
- Active
- Stock
- 2910 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002NXAKR and 2N7002E-T1-E3 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making them viable functional substitutes in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific drive conditions before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
On-Resistance
Validation required
Parts at a glance
Part B
2N7002E-T1-E3
Vishay Siliconix
- Lifecycle
- Active
- Stock
- 7566 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002NXAKR | 2N7002E-T1-E3 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the device can block; must meet or exceed circuit rail voltage for safe operation. |
| Continuous Drain Current (Id) | 300 mA | 300 mA | Defines the maximum continuous load current the MOSFET can carry without exceeding thermal limits. |
| Drain-Source On-Resistance (Rds(on)) | 1.6 Ω @ Vgs=10V, Id=500mA | 1.6 Ω @ Vgs=10V, Id=500mA | Lower on-resistance reduces conduction losses and heat generation in switching and load-driving applications. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Determines the minimum gate voltage needed to turn the device on; critical for compatibility with logic-level drive circuits. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can permanently damage the gate oxide. |
| Power Dissipation (Pd) | 420 mW | 420 mW | Maximum power the package can dissipate; limits usable current at higher ambient temperatures. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; higher capacitance slows transitions and increases drive loss. |
| Package / Mounting | SOT-23 (TO-236) Surface Mount | SOT-23 (TO-236) Surface Mount | Footprint and mounting style must match the PCB layout for direct drop-in substitution. |
| Operating Junction Temperature | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; must cover the application's ambient and self-heating conditions. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002NXAKR | 2N7002E-T1-E3 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 190mA (Ta), 300mA (Tc) | 240mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 4.5Ohm @ 100mA, 10V | 3Ohm @ 250mA, 10V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.43 nC @ 4.5 V | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 20 pF @ 10 V | 21 pF @ 5 V |
| Power Dissipation (Max) | 265mW (Ta), 1.33W (Tc) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the key differences between the 2N7002NXAKR and the 2N7002E-T1-E3?
The 2N7002NXAKR is a 60 V, 300 mA N-channel MOSFET in a SOT-23 (TO-236AB) package from Nexperia, while the 2N7002E-T1-E3 is a 60 V, 240 mA N-channel MOSFET in a SOT-23 package from Vishay Siliconix. The 2N7002NXAKR offers a higher continuous drain current rating and lower on-resistance at 10 V VGS, whereas the 2N7002E-T1-E3 provides a lower gate threshold voltage range and is widely used in legacy designs.
Are the 2N7002NXAKR and 2N7002E-T1-E3 pin-compatible?
Yes, both devices use the standard SOT-23 (TO-236AB) package with the same pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. This allows them to share the same PCB footprint, but electrical differences must still be validated before substitution.
Can the 2N7002NXAKR directly replace the 2N7002E-T1-E3 in an existing design?
Direct replacement is possible only after verifying that the higher continuous drain current (300 mA vs 240 mA) and different on-resistance and gate threshold characteristics of the 2N7002NXAKR do not adversely affect the circuit. The 2N7002NXAKR has a maximum RDS(on) of 1.6 Ω at VGS = 10 V and ID = 500 mA, while the 2N7002E-T1-E3 specifies RDS(on) of 1.8 Ω at VGS = 10 V and ID = 500 mA. Always confirm against the latest manufacturer datasheets.
What are the maximum drain-source voltage and continuous drain current ratings for each device?
Both the 2N7002NXAKR and 2N7002E-T1-E3 have a maximum drain-source voltage (VDS) of 60 V. The 2N7002NXAKR is rated for a continuous drain current (ID) of 300 mA at TA = 25 °C, while the 2N7002E-T1-E3 is rated for 240 mA at TA = 25 °C.
How do the gate threshold voltages compare between the 2N7002NXAKR and 2N7002E-T1-E3?
The 2N7002NXAKR has a gate threshold voltage (VGS(th)) range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002E-T1-E3 specifies VGS(th) between 1.0 V and 2.0 V at the same test conditions. The narrower and lower upper threshold of the 2N7002E-T1-E3 can be advantageous in low-voltage logic-level applications.
What are the typical on-resistance values for these MOSFETs?
The 2N7002NXAKR has a maximum on-resistance RDS(on) of 1.6 Ω at VGS = 10 V and ID = 500 mA, and 2.5 Ω at VGS = 4.5 V and ID = 200 mA. The 2N7002E-T1-E3 specifies RDS(on) of 1.8 Ω at VGS = 10 V and ID = 500 mA, and 2.8 Ω at VGS = 4.5 V and ID = 200 mA. Lower RDS(on) in the 2N7002NXAKR reduces conduction losses.
Do both devices meet the same qualification or compliance standards?
Both the 2N7002NXAKR and 2N7002E-T1-E3 are RoHS-compliant and halogen-free according to their respective manufacturer datasheets. The 2N7002NXAKR from Nexperia is AEC-Q101 qualified for automotive applications, while the 2N7002E-T1-E3 from Vishay Siliconix is not specified as AEC-Q101 qualified in its standard datasheet. Verify current compliance status with the manufacturer before use in regulated applications.
Which device is better suited for low-voltage logic-level switching?
The 2N7002E-T1-E3 may be preferable for low-voltage logic-level switching because its maximum gate threshold voltage is 2.0 V, compared to 2.5 V for the 2N7002NXAKR, allowing it to turn on more reliably at lower gate drive voltages. However, the 2N7002NXAKR offers lower on-resistance at both 10 V and 4.5 V VGS, which can be advantageous when minimizing conduction losses is the primary concern.
What are the power dissipation ratings for the 2N7002NXAKR and 2N7002E-T1-E3?
The 2N7002NXAKR has a total power dissipation rating of 420 mW at TA = 25 °C. The 2N7002E-T1-E3 specifies a total power dissipation of 350 mW at TA = 25 °C. Actual allowable dissipation depends on PCB layout, ambient temperature, and thermal resistance.