BAV99LT3G vs BAV99E6327 Comparison

This in-depth comparison of the BAV99LT3G and BAV99E6327 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
BAV99LT3G

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12125 PCS | onsemi
BAV99E6327

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5629 PCS | Infineon Technologies
Package TO-236-3 TO-236-3
Description DIODE ARRAY GP 100V 215MA SOT23 DIODE ARRAY GP 80V 200MA SOT23
Supplier onsemi Infineon Technologies,Rochester Electronics, LLC
Part Status Active Obsolete
Diode Configuration 1 Pair Series Connection 1 Pair Series Connection
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 80 V
Current - Average Rectified(Io)(per Diode) 215mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 4 ns
Current - Reverse Leakage @ Vr 2.5 µA @ 70 V 150 nA @ 70 V
Operating Temperature - Junction -65°C ~ 150°C 150°C (Max)
Mounting Type Surface Mount Surface Mount
Comparison Model : BAV99LT3G BAV99E6327

+BOM RFQ