CSD16570Q5B vs CSD16340Q3

This in-depth comparison of the CSD16570Q5B and CSD16340Q3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD16570Q5B

Texas Instruments

Lifecycle
Active
Stock
2929 PCS
Package
TDFN-8
Series
Transistors - FETs, MOSFETs - Single
Part B

CSD16340Q3

Texas Instruments

Lifecycle
Active
Stock
5244 PCS
Package
TDFN-8
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD16570Q5B CSD16340Q3
Series NexFET™ NexFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain(Id) @ 25°C 100A (Ta) 21A (Ta), 60A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 2.5V, 8V
Rds On(Max) @ Id Vgs 0.59mOhm @ 50A, 10V 4.5mOhm @ 20A, 8V
Vgs(th)(Max) @ Id 1.9V @ 250µA 1.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 250 nC @ 10 V 9.2 nC @ 4.5 V
Vgs(Max) ±20V +10V, -8V
Input Capacitance(Ciss)(Max) @ Vds 14000 pF @ 12 V 1350 pF @ 12.5 V
Power Dissipation (Max) 3.2W (Ta), 195W (Tc) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount