CSD16570Q5B
Texas Instruments
- Lifecycle
- Active
- Stock
- 2929 PCS
- Package
- TDFN-8
- Series
- Transistors - FETs, MOSFETs - Single
This in-depth comparison of the CSD16570Q5B and CSD16340Q3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.
Texas Instruments
Texas Instruments
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| Specification | CSD16570Q5B | CSD16340Q3 |
|---|---|---|
| Series | NexFET™ | NexFET™ |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V | 25 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Ta) | 21A (Ta), 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 2.5V, 8V |
| Rds On(Max) @ Id Vgs | 0.59mOhm @ 50A, 10V | 4.5mOhm @ 20A, 8V |
| Vgs(th)(Max) @ Id | 1.9V @ 250µA | 1.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 250 nC @ 10 V | 9.2 nC @ 4.5 V |
| Vgs(Max) | ±20V | +10V, -8V |
| Input Capacitance(Ciss)(Max) @ Vds | 14000 pF @ 12 V | 1350 pF @ 12.5 V |
| Power Dissipation (Max) | 3.2W (Ta), 195W (Tc) | 3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |