CSD16340Q3

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CSD16340Q3

+BOM

MOSFET N-CH 25V 21A/60A 8VSON

  • ManufacturerTexas Instruments

  • Mfr. Part #CSD16340Q3

  • Package PowerTDFN-8

  • In Stock5244

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 25 V
Current-ContinuousDrain(Id)@25°C 21A (Ta), 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 8V
RdsOn(Max)@IdVgs 4.5mOhm @ 20A, 8V
Vgs(th)(Max)@Id 1.1V @ 250µA
GateCharge(Qg)(Max)@Vgs 9.2 nC @ 4.5 V
Vgs(Max) +10V, -8V
InputCapacitance(Ciss)(Max)@Vds 1350 pF @ 12.5 V
PowerDissipation(Max) 3W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSON-CLIP (3.3x3.3)

Overview

Description

CSD16340Q3 is likely a code or identifier related to a course, module, or project within a specific educational or organizational context. Without specific context or additional information, it's challenging to provide an exact description. However, if we assume this relates to an academic course, "Introduction to CSD16340Q3" would typically involve an overview of the main topics, objectives, and expectations associated with the course.
In a general sense, such an introduction would cover:
1. Course Outline: A brief overview of what the course entails, including key topics and areas of study.
2. Objectives: What students are expected to learn or achieve by the end of the course.
3. Materials and Resources: Information on textbooks, reading materials, and other resources needed.
4. Assessment Methods: Explanation of grading criteria, including exams, assignments, and projects.
5. Prerequisites: Any prior knowledge or qualifications required to undertake the course.
6. Schedule: A timeline of lectures, assignments, and exams.
For precise details, refer to official course documentation or contact the relevant academic department.

Equivalent

The CSD16340Q3 is a power MOSFET from Texas Instruments. Equivalent products may include MOSFETs with similar specifications such as:
1. IRLML2502 from Infineon Technologies
2. Si2312 from Vishay
3. FDMC7660S from ON Semiconductor
When selecting an equivalent, ensure that the voltage, current ratings, RDS(on), package type, and other critical specifications match your application requirements. Always consult datasheets for precise matching.

Features

The CSD16340Q3 is a power MOSFET designed for various applications. Key features include:
1. N-Channel MOSFET: It is an N-channel MOSFET, which typically has advantages in speed and efficiency over P-channel MOSFETs.
2. Voltage Rating: The device typically handles up to 30V, making it suitable for low to medium voltage applications.
3. Current Capacity: It can conduct a significant amount of current, often upwards of tens of amperes, which is ideal for power-intensive uses.
4. RDS(on) Performance: The MOSFET boasts a low on-resistance (RDS(on)), which minimizes power losses and enhances efficiency during operation.
5. Compact Package: It is usually available in a compact package, such as the SON 3.3mm x 3.3mm, which saves space on printed circuit boards.
6. Thermal Performance: The design often includes optimized thermal characteristics to handle heat dissipation effectively.
7. Fast Switching: This MOSFET is designed for fast switching speeds, beneficial in applications requiring rapid on/off cycles.
These features make the CSD16340Q3 suitable for applications like power management, DC-DC converters, and load switching.

Pinout

The CSD16340Q3 is a power MOSFET from Texas Instruments. It typically comes in a SON 3x3 package with a pin count of 8. Here’s a concise breakdown of its pins and functions:
1. Pin 1, 2, 3: Source (S) - These pins are connected internally and serve as the source terminal of the MOSFET.
2. Pin 4: Gate (G) - This pin is the gate terminal, which controls the MOSFET's operation by being driven with a voltage to turn the device on or off.
3. Pin 5, 6, 7, 8: Drain (D) - These pins are connected internally and serve as the drain terminal of the MOSFET.
The MOSFET is used primarily for switching applications and is known for its low on-resistance, which makes it suitable for applications requiring efficient power handling. The package also includes a thermal pad (not counted among the pins) for effective heat dissipation.

Manufacturer

The CSD16340Q3 is manufactured by Texas Instruments (TI), a global technology company headquartered in Dallas, Texas. Texas Instruments is primarily known for designing and manufacturing semiconductors and various integrated circuits, which are fundamental components in electronic devices. The company serves a wide range of industries, including automotive, communications, industrial, and consumer electronics. TI’s product portfolio encompasses analog chips, embedded processors, digital signal processors, and microcontrollers, among others. The company is renowned for its innovation in analog and embedded processing technologies and plays a key role in advancing electronic design and functionality across different sectors.

Application

The CSD16340Q3 is a N-channel MOSFET typically used in various power management applications. Key application areas include:
1. DC-DC Converters: Utilized for efficient power conversion in voltage regulation.
2. Motor Control: Employed in driving motors due to its efficiency and reliability.
3. Load Switches: Acts as a switch for controlling power distribution in electronic devices.
4. Battery Management: Used in circuits that monitor and control battery charge and discharge cycles.
5. LED Drivers: Powers LED systems with precise current control.
6. Power Supply Circuits: Integral in designing efficient power supplies for different electronic devices.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.

Package

The CSD16340Q3 is a power MOSFET packaged in a Q3 (3.3 mm x 3.3 mm) SON (Small Outline No-lead) package, also known as a QFN (Quad Flat No-lead) package. It is designed for efficient thermal performance and a compact footprint suitable for high-density applications.

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