CSD17303Q5 vs CSD17308Q3

This in-depth comparison of the CSD17303Q5 and CSD17308Q3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD17303Q5

Texas Instruments

Lifecycle
Active
Stock
4931 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
+BOM RFQ
Part B

CSD17308Q3

Texas Instruments

Lifecycle
Active
Stock
5348 PCS
Package
TDFN-8
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD17303Q5 CSD17308Q3
Series NexFET™ NexFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain(Id) @ 25°C - 14A (Ta), 44A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 3V, 8V
Rds On(Max) @ Id Vgs - 10.3mOhm @ 10A, 8V
Vgs(th)(Max) @ Id - 1.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 5.1 nC @ 4.5 V
Vgs(Max) - +10V, -8V
Input Capacitance(Ciss)(Max) @ Vds - 700 pF @ 15 V
Power Dissipation (Max) 3.2W (Ta) 2.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 100A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V -
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 8V -
Vgs(th) (Max) @ Id 1.6V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V -
Vgs (Max) +10V, -8V -
Input Capacitance (Ciss) (Max) @ Vds 3420 pF @ 15 V -
Packaging Bulk -
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