CSD17303Q5 vs CSD17570Q5B

This in-depth comparison of the CSD17303Q5 and CSD17570Q5B provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD17303Q5

Texas Instruments

Lifecycle
Active
Stock
4931 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Part B

CSD17570Q5B

Texas Instruments

Lifecycle
Active
Stock
2925 PCS
Package
TDFN-8
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD17303Q5 CSD17570Q5B
Series NexFET™ NexFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain(Id) @ 25°C - 100A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 0.69mOhm @ 50A, 10V
Vgs(th)(Max) @ Id - 1.9V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 121 nC @ 4.5 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 13600 pF @ 15 V
Power Dissipation (Max) 3.2W (Ta) 3.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 100A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V -
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 8V -
Vgs(th) (Max) @ Id 1.6V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V -
Vgs (Max) +10V, -8V -
Input Capacitance (Ciss) (Max) @ Vds 3420 pF @ 15 V -
Packaging Bulk -