FDC6327C vs FDC638P
This in-depth comparison of the FDC638P and FDC6327C provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
SSOT-6
Description
MOSFET P-CH 20V 4.5A SUPERSOT6
MOSFET N/P-CH 20V SSOT-6
Series
PowerTrench®
PowerTrench®
Part Status
Active
-
Base Product Number
FDC638
-
FET Type
P-Channel
-
Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
20 V
-
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
-
Rds On (Max) @ Id, Vgs
48mOhm @ 4.5A, 4.5V
-
Vgs(th) (Max) @ Id
1.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
-
Vgs (Max)
±8V
-
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 10 V
-
Power Dissipation (Max)
1.6W (Ta)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
N and P-Channel
FETFeature
-
Logic Level Gate
DraintoSourceVoltage(Vdss)
-
20V
Current-ContinuousDrain(Id)@25°C
-
2.7A, 1.9A
RdsOn(Max)@IdVgs
-
80mOhm @ 2.7A, 4.5V
Vgs(th)(Max)@Id
-
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
4.5nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds
-
325pF @ 10V
Power-Max
-
700mW
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
