FDG6303N vs FDG6313N

This in-depth comparison of the FDG6303N and FDG6313N provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDG6303N

onsemi

Lifecycle
Active
Stock
6717 PCS
Series
Transistors - FETs, MOSFETs - FET, MOSFET Arrays
+BOM RFQ
Part B

FDG6313N

Fairchild Semiconductor

Lifecycle
Active
Stock
4277 PCS
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDG6303N FDG6313N
Supplier - Rochester Electronics, LLC
Part Status Obsolete Active
Base Product Number FDG6303 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 25V -
Current - Continuous Drain (Id) @ 25°C 500mA -
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V -
Power - Max 300mW -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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