FDG6303N vs FDG6314P

This in-depth comparison of the FDG6303N and FDG6314P provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDG6303N

onsemi

Lifecycle
Active
Stock
6717 PCS
Series
Transistors - FETs, MOSFETs - FET, MOSFET Arrays
+BOM RFQ
Part B

FDG6314P

onsemi

Lifecycle
Active
Stock
9279 PCS
Package
SC-88
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDG6303N FDG6314P
Supplier - onsemi
Part Status Obsolete Obsolete
FET Type - 2 P-Channel (Dual)
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 25V 25V
Mounting Type Surface Mount Surface Mount
Base Product Number FDG6303 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) -
Current - Continuous Drain (Id) @ 25°C 500mA -
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V -
Power - Max 300mW -
Operating Temperature -55°C ~ 150°C (TJ) -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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